PDF LV5113T Data sheet ( Hoja de datos )

Número de pieza	LV5113T
Descripción	2-Cell Lithium-Ion Secondary Battery Protection IC
Fabricantes	Sanyo Semicon Device
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No Preview Available ! www.DataSheet.co.kr Ordering number : ENA0694A LV5113T CMOS IC 2-Cell Lithium-Ion Secondary Battery Protection IC Overview The LV5113T is a protection IC for 2-cell lithium-ion secondary batteries. Features • Monitoring function for each cell: • High detection voltage accuracy: • Hysteresis cancel function: • Discharge current monitoring function: • Low current consumption: • 0V cell charging function: Detects overcharge and over-discharge conditions and controls the charging and discharging operation of each cell. Over-charge detection accuracy ±25mV Over-discharge detection accuracy ±100mV The hysteresis of over-discharge detection voltage is canceled by sensing the connection of a load after overcharging has been detected. Detects over-currents, load shorting, and excessively high voltage of a charger and regulates charging and discharging operations. Normal operation mode typ. 6.0µA Stand by mode max. 0.2µA Charging is enabled even when the cell voltage is 0V by giving a potential difference between the VDD pin and V- pin. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. 52307 MS IM / 30707 MS IM 20061220-S00008 No.A0694-1/8 Datasheet pdf - http://www.DataSheet4U.net/ 1 page www.DataSheet.co.kr LV5113T Functional Description Over-charge detection If either of the cell voltage is equal to or more than the over-charge detection voltage, stop further charging by turning “L” the Cout pin and turning off external Nch MOS FET after the over-charge detection delay time. This delay time is set by the internal counter. The over-charge detection comparator has the hysteresis function. Note that this hysteresis can be cancelled by connecting the load after detection of over-charge detection. Once over-charge detection is made, over-current detection is not made to prevent malfunction. Note that short- circuit can be detected. Over-charge return If charger is connected and both cell voltages become equal to or lower than the over-charge recovery voltage or over-charge detection voltage when load is connected, the Cout pin returns to “H” after the over-charge recovery delay time set by the internal counter. When load is connected and either cell or both cell voltages are equal to or more than the over-charge detection voltage, the Cout pin does not return to “H.” When the load current is passed through the external Cout pin parasite diode of Nch MOS FET after the over-charge recovery delay time and each cell voltage becomes equal to or below over-charge detection voltage, the Cout returns to “H.” However, high voltage charger is connected as mentioned below, Cout pin does not return to “H” because over- charger detection sequence starts after over-charge recovery. Over-discharge detection When either cell voltage is equal to or below over-discharge voltage, stop further discharge by turning “L” the Dout pin and turning off external Nch MOS FET after the over-charge detection delay time. The IC becomes standby state after detecting over-discharge and its consumption current is kept at about 0A. After detection, the V- pin will be connected to VDD pin via 200kΩ. Over-discharge return Return from over-discharge is made by connecting charger. If the V- pin voltage becomes equal to or lower than the standby return voltage by connecting charger after detecting over-discharge, it returns from the standby state to start cell voltage monitoring. If both voltages become equal to or more than the over-discharge detection voltage by charging, the Dout pin returns to “H” after the over-discharge return delay time set by the internal counter. Over-current detection When high current is passed through the battery, the V potential rises by the ON resister of external MOS FET and becomes equal to or more than the over-current detection voltage, that will be deemed over-current state. Turn “L” the Dout pin after the over-current detection delay time and turn off the external Nch MOS FET to prevent high current in the circuit. The delay time is set by the internal counter. After detection, the V- pin will be connected to VSS via 30kΩ. It will not go into standby state after detecting over-current. Short circuit detection If greater discharge current is passed and the V- pin voltage becomes equal to or more than the short-circuit detection voltage, it will go into short-circuit detection state after the short circuit delay time shorter than the over-current detection delay time. When short-circuit is detected, just like the time of over-current detection, turn Dout pin “L” and turn off external Nch MOS FET to prevent high current in the circuit. The V- pin will be connected to VSS after detection via 30kΩ. It will not go into standby state after detecting short-circuit. Over-current/short-detection return After detecting over-current or short circuit, the return resistor (typ.30kΩ) between V- pin and VSS pin becomes effective and if the resistor is opened the V- pin voltage will be pulled by the VSS pin voltage. Thereafter, the IC will return from the over-current/short-circuit detection state when the V- pin voltage becomes equal to or below the over- current detection voltage and the Dout pin returns to “H” after over-current return delay time set by the internal counter. No.A0694-5/8 Datasheet pdf - http://www.DataSheet4U.net/ 5 Page

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