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PDF LE25CB5122M Data sheet ( Hoja de datos )
| Número de pieza | LE25CB5122M | |
| Descripción | Serial SPI EEPROM | |
| Fabricantes | Sanyo Semicon Device | |
| Logotipo |  |
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Ordering number : ENA1679A
LE25CB5122M
Serial SPI EEPROM
(SPI Bus)(512Kbit)
Overview
The LE25CB5122M is a 512Kbit EEPROM that supports serial peripheral interface (SPI). It realizes high speed operation
and high level reliability by incorporating SANYO’s high performance CMOS EEPROM technology. The interface is
compatible with SPI bus protocol, therefore, it is best suited for applications that require small-scale rewritable nonvolatile
parameter memory. Moreover, the LE25CB5122M has a 128 bytes page rewrite function that provides rapid data
rewriting.
Features
• Capacity
• Single supply voltage
• Serial interface
• Operating clock frequency
• Low current dissipation
• Page write function
• Rewrite time
• Number of rewrite times
• Data retention period
• High reliability
: 512Kbits (64K×8bits)
: 2.7V to 3.6V
: SPI Mode0, Mode3 supported
: 5MHz
: Standby
: 5μA (max.)
: Active (Read) : 3mA (max.)
: Active (Rewrite) : 5mA (max.)
: 128bytes
: 5ms
: 106 times (Page Write)
: 20years
: Adopts SANYO’s proprietary symmetric memory array configuration (USP6947325)
Incorporates a feature to prohibit write operations under low voltage conditions.
* This product is licensed from Silicon Storage Technology, Inc. (USA), and manufactured and sold by SANYO Semiconductor Co., Ltd.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
10511 SY/31710 SY 20100205-S00001 No.NA1679-1/13
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
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Figure 2 Serial Input Timing
(SPI Mode 0)
CS
SCK
SI
tCLS tCSS
tDS tDH
DATA VALID
LE25CB5122M
tCPH
tCLHI tCLLO tCSH tCLH
SO
High Impedance
High Impedance
(SPI Mode 3)
CS
SCK
SI
tCLS
tCSS
tDS tDH
DATA VALID
tCLLO tCLHI
tCPH
tCSH tCLH
SO
High Impedance
High Impedance
No.NA1679-5/13
Datasheet pdf - http://www.DataSheet4U.net/
5 Page 
www.DataSheet.co.kr
LE25CB5122M
5. Write (WRITE)
The LE25CB5122M enables pages with up to 128bytes to be written. Any number of bytes from 1 to 128bytes can be
written within the same sector page (page addresses : A15 to A7). “Figure 9 Write” shows the write timing waveforms,
and Figure 12 shows a write flowchart. After the falling CS edge, the command (02H) is input followed by the 16-bit
addresses (Add). The write data is then loaded until the rising CS edge, and the internal addresses (A6 to A0) are
incremented (Add+1) every time the data is loaded in 1-byte increments. The data loading continues until the rising CS
edge. If the data loaded has exceeded 128bytes, the 128bytes loaded last are written. The write data must be loaded in
1-byte increments, and the write operation is not performed at the rising CS edge occurring at any other timing. The
write time is 5ms (max.) when 128bytes (1page) are written at one time.
Figure 9 Write
CS
SCK
SI
Mode3
Mode0
0 1 2 3 4 5 6 7 8 15 16 23 24 31 32 39 40 47
8CLK
02h
(00000010)
Add. Add.
(A15-A8) (A7-A0)
PD
(N)
PD
(N+1)
PD
(N+2)
Self-timed
Write Cycle
tWC
1047
PD
(N+127)
SO
High Impedance
6. Hold Function
Using HOLD pin, the hold function suspends serial communication (it places it in the hold status). “Figure 10 HOLD”
shows the timing waveforms. The device is placed in the hold status at the falling HOLD edge while the logic level of
SCK is low, and it exits from the hold status at the rising HOLD edge. When the logic level of SCK is high, HOLD must
not rise or fall. The hold function takes effect when the logic of CS is low, and the hold status is exited and serial
communication is reset at the rising CS edge. In the hold status, the SO output is in the high-impedance state, and SI
and SCK are “don’t care.”
Figure 10 HOLD
CS
SCK
Active
tHS
HOLD
Active
tHS
HOLD
SO
tHH tHH
tHHZ
tHLZ
High Impedance
7. Hardware Data Protection
In order to protect against unintentional writing at power-on, the LE25CB5122M incorporates a power-on reset
function.
No.NA1679-11/13
Datasheet pdf - http://www.DataSheet4U.net/
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