DataSheetWiki


2SC1847 fiches techniques PDF

Panasonic Semiconductor - Silicon NPN epitaxial planar type

Numéro de référence 2SC1847
Description Silicon NPN epitaxial planar type
Fabricant Panasonic Semiconductor 
Logo Panasonic Semiconductor 





1 Page

No Preview Available !





2SC1847 fiche technique
Power Transistors
2SC1847
Silicon NPN epitaxial planar type
For medium output power amplification
Complementary to 2SA0886
Features
Output of 4 W can be obtained by a complementary pair with
2SA0886
TO-126B package which requires no insulation plate for installa-
tion to the heat sink
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
50
40
5
1.5
3
1.2
150
55 to +150
Unit
V
V
V
A
A
W
°C
°C
φ 3.16±0.1
8.0+–00..15
Unit: mm
3.2±0.2
0.75±0.1
0.5±0.1
4.6±0.2
2.3±0.2
0.5±0.1
1.76±0.1
123
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio *
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
VCBO
VCEO
ICBO
ICEO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Cob
IC = 1 mA, IE = 0
IC = 2 mA, IB = 0
VCB = 20 V, IE = 0
VCE = 10 V, IB = 0
VEB = 5 V, IC = 0
VCE = 5 V, IC = 1 A
IC = 2 A, IB = 0.2 A
IC = 2 A, IB = 0.2 A
VCB = 5 V, IE = − 0.5 A, f = 200 MHz
VCB = 20 V, IE = 0, f = 1 MHz
Min Typ Max Unit
50 V
40 V
1 µA
100 µA
10 µA
80 220
1V
1.5 V
150 MHz
35 pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
hFE
80 to 160
120 to 220
Publication date: February 2003
SJD00095BED
1

PagesPages 4
Télécharger [ 2SC1847 ]


Fiche technique recommandé

No Description détaillée Fabricant
2SC184 Transistors AM FREQUENCY CONVERTER IF AMPLIFIER ETC
ETC
2SC1841 NPN SILICON TRANSISTOR NEC
NEC
2SC1842 NPN Silicon Transistor NEC
NEC
2SC1844 NPN SILICON TRANSISTOR NEC
NEC

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche