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PDF 2SC1815L Data sheet ( Hoja de datos )
| Número de pieza | 2SC1815L | |
| Descripción | Silicon NPN Epitaxial Type TRANSISTOR | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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2SC1815(L)
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC1815(L)
Audio Frequency Voltage Amplifier Applications
Low Noise Amplifier Applications
Unit: mm
· High breakdown voltage, high current capability
: VCEO = 50 V (min), IC = 150 mA (max)
· Excellent linearity of hFE
: hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA
: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
· Low noise: NF = 0.2dB (typ.) (f = 1 kHz).
· Complementary to 2SA1015 (L). (O, Y, GR class).
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
60
50
5
150
50
400
125
-55~125
Unit
V
V
V
mA
mA
mW
°C
°C
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1B
Weight: 0.21 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter
Saturation voltage
Base-emitter
Transition frequency
Collector output capacitance
Base intrinsic resistance
Noise figure
ICBO
VCB = 60 V, IE = 0
IEBO
VEB = 5 V, IC = 0
hFE (1)
VCE = 6 V, IC = 2 mA
(Note)
hFE (2)
VCE = 6 V, IC = 150 mA
VCE (sat) IC = 100 mA, IB = 10 mA
VBE (sat) IC = 100 mA, IB = 10 mA
fT VCE = 10 V, IC = 1 mA
Cob VCB = 10 V, IE = 0, f = 1 MHz
rbb’ VCE = 10 V, IE = -1 mA, f = 30 MHz
NF (1)
VCE = 6 V, IC = 0.1 mA
RG = 10 kW, f = 100 Hz
NF (2)
VCE = 6 V, IC = 0.1 mA
RG = 10 kW, f = 1 kHz
Note: hFE (1) classification O: 70~140, Y: 120~240, GR: 200~400, BL: 350~700
Min Typ. Max Unit
¾ ¾ 0.1 mA
¾ ¾ 0.1 mA
70 ¾ 700
25 100 ¾
¾ 0.1 0.25
V
¾ ¾ 1.0
80 ¾ ¾ MHz
¾ 2.0 3.5 pF
¾ 50 ¾ W
¾ 0.5
6
dB
¾ 0.2
3
1 2003-03-27
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SC1815L.PDF ] | |
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