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Numéro de référence | K25N120 | ||
Description | Fast IGBT in NPT-technology | ||
Fabricant | Infineon Technologies | ||
Logo | |||
www.DataSheet.co.kr
SKW25N120
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
• 40lower Eoff compared to previous generation
• Short circuit withstand time – 10 µs
• Designed for:
- Motor controls
- Inverter
- SMPS
G
• NPT-Technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1 for target applications
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
E
PG-TO-247-3
Type
SKW25N120
VCE
1200V
IC
25A
Eoff
2.9mJ
Tj
150°C
Marking Package
K25N120 PG-TO-247-3
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE ≤ 1200V, Tj ≤ 150°C
Diode forward current
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Short circuit withstand time2
VGE = 15V, 100V≤VCC ≤1200V, Tj ≤ 150°C
Power dissipation
TC = 25°C
Operating junction and storage temperature
Soldering temperature,
wavesoldering, 1.6mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj , Tstg
Ts
Value
1200
46
25
84
84
Unit
V
A
42
25
80
±20
10
313
-55...+150
260
V
µs
W
°C
1 J-STD-020 and JESD-022
2 Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2_2 Sep 08
Datasheet pdf - http://www.DataSheet4U.net/
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Pages | Pages 13 | ||
Télécharger | [ K25N120 ] |
No | Description détaillée | Fabricant |
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