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2SC1645S fiches techniques PDF

ROHM Semiconductor - High-gain Amplifier Transistor (-32V/ -0.3A)

Numéro de référence 2SC1645S
Description High-gain Amplifier Transistor (-32V/ -0.3A)
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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2SC1645S fiche technique
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Transistors
2SD1383K / 2SC1645S
High-gain Amplifier Transistor (32V , 0.3A)
2SD1383K / 2SC1645S
zFeatures
1) Darlington connection for high DC current gain.
2) Built-in 4kresistor between base and emitter.
3) Complements the 2SD852K / 2SA830S.
zCircuit diagram
C
B
RBE 4k
E : Emitter
B : Base
C : Collector
E
zExternal dimensions (Unit : mm)
2SD1383K
2.9
0.4
(3)
1.1
0.8
(1)Emitter
(2)Base
(3)Collector
(2) (1)
0.95 0.95
1.9
0.15
Each lead has same dimensions
2SC1645S
4.0 2.0
zPackaging specifications
Type
Package
hFE
Marking
Code
Basic ordering unit (pieces)
Denotes hFE
2SD1383K
SMT3
B
W
T146
3000
2SC1645S
SPT
B
TP
5000
(1)Emitter
(2)Collector
(3)Base
0.45
2.5
5.0
(1) (2) (3)
0.5 0.45
Taping specifications
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1 RBE=0
2 Single pulse Pw=10ms
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
40
32
6
0.3
1.5
0.2
150
55 to +150
Unit
V
V 1
V
A (DC)
A (Pulse) 2
W
°C
°C
Rev.A
1/3

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