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Número de pieza | IHY30N160R2 | |
Descripción | Reverse conducting IGBT | |
Fabricantes | Infineon Technologies | |
Logotipo | ||
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IHY30N160R2
Soft Switching Series
TrenchStop® Reverse Conducting (RC-)IGBT with monolithic body diode
Features:
• Powerful monolithic body diode with very low forward voltage
• Body diode clamps negative voltages
• Trench and fieldstop technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behavior
• NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
• Low EMI
• New TO-247HC package offers increased air & creepage
distances compared to TO247 package
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant
• Halogen free (according to IEC 61249-2-21)
• Complete product spectrum and PSpice models:
http://www.infineon.com/igbt/
C
G
E
Applications:
• Inductive cooking
• Soft switching applications
Type
VCE
IC
VCE(sat),Tj=25°C
Tj,max
Marking
Package
IHY30N160R2
1600V 30A
1.8V
175°C H30R1602 PG-TO247HC-3
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area (VCE ≤ 1600V, Tj ≤ 175°C)
Diode forward current
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Diode surge non repetitive current, tp limited by Tjmax
TC = 25°C, tp = 10ms, sine halfwave
TC = 25°C, tp ≤ 2.5µs, sine halfwave
TC = 100°C, tp ≤ 2.5µs, sine halfwave
Gate-emitter voltage
Transient Gate-emitter voltage (tp < 10 µs, D < 0.01)
Power dissipation TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
VCE
IC
ICpuls
-
IF
IFpuls
IFSM
VGE
Ptot
Tj
Tstg
-
1600
60
30
90
90
60
30
90
50
130
120
±20
±25
312
-40...+175
-55...+175
260
V
A
V
W
°C
1 J-STD-020 and JESD-022
Power Semiconductors
1
Rev. 2.1 Nov. 09
Datasheet pdf - http://www.DataSheet4U.net/
1 page www.DataSheet.co.kr
IHY30N160R2
Soft Switching Series
80A
70A VGE=20V
60A 15V
13V
50A 11V
40A 9V
7V
30A
20A
10A
0A
0V 1V 2V 3V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
80A
70A VGE=20V
15V
60A 13V
50A 11V
9V
40A 7V
30A
20A
10A
0A
0V 1V 2V 3V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristic
(Tj = 175°C)
80A
70A
60A
50A
40A
30A
TJ=175°C
20A
25°C
10A
0A
0V 2V 4V 6V 8V 10V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(VCE=20V)
3.0V
2.5V
2.0V
1.5V
1.0V
IC=60A
IC=30A
IC=15A
0.5V
0.0V
0°C
50°C
100°C
150°C
Figure 8.
TJ, JUNCTION TEMPERATURE
Typical collector-emitter saturation
voltage as a function of junction
temperature
(VGE =15V)
Power Semiconductors
5
Rev. 2.1 Nov. 09
Datasheet pdf - http://www.DataSheet4U.net/
5 Page www.DataSheet.co.kr
IHY30N160R2
Soft Switching Series
i,v
di /dt
F
I
F
I
rrm
t =t +t
rr S F
Q =Q +Q
rr S
F
t
rr
tt
SF
Q
S
Q
F
10% I
t
rrm
di /dt
90% I r r
rrm
V
R
Figure A. Definition of switching times
Figure C. Definition of diodes
switching characteristics
τ1
r1
Tj (t)
p(t) r1
τ2
r2
r2
τn
rn
rn
TC
Figure D. Thermal equivalent
circuit
Figure B. Definition of switching losses
Figure E. Dynamic test circuit
Power Semiconductors
11
Rev. 2.1 Nov. 09
Datasheet pdf - http://www.DataSheet4U.net/
11 Page |
Páginas | Total 12 Páginas | |
PDF Descargar | [ Datasheet IHY30N160R2.PDF ] |
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IHY30N160R2 | Reverse conducting IGBT | Infineon Technologies |
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