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2SC1047 fiches techniques PDF

Panasonic Semiconductor - Silicon NPN epitaxial planer type(For high-frequency amplification)

Numéro de référence 2SC1047
Description Silicon NPN epitaxial planer type(For high-frequency amplification)
Fabricant Panasonic Semiconductor 
Logo Panasonic Semiconductor 





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2SC1047 fiche technique
Transistor
2SC1047
Silicon NPN epitaxial planer type
For high-frequency amplification
s Features
q Optimum for RF amplification of FM/AM radios.
q High transition frequency fT.
5.0±0.2
Unit: mm
4.0±0.2
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
30
20
3
20
400
150
–55 ~ +150
Unit
V
V
V
mA
mW
˚C
˚C
+0.2
0.45 –0.1
1.27
+0.2
0.45 –0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
s Electrical Characteristics (Ta=25˚C)
Parameter
Collector to base voltage
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Common emitter reverse transfer capacitance
Transition frequency
Power gain
Noise figure
Symbol
VCBO
VEBO
hFE*
VBE
Cre
fT
PG
NF
Conditions
IC = 10µA, IE = 0
IE = 10µA, IC = 0
VCB = 6V, IE = –1mA
VCB = 6V, IE = –1mA
VCE = 6V, IC = 1mA, f = 10.7MHz
VCB = 6V, IE = –1mA, f = 200MHz
VCB = 6V, IE = –1mA, f = 100MHz
VCB = 6V, IE = –1mA, f = 100MHz
min typ max Unit
30 V
3V
40 260
0.72 V
0.8 1 pF
450 650
MHz
20 dB
3.3 5 dB
*hFE Rank classification
Rank
B
hFE 40 ~ 110
C
65 ~ 160
D
100 ~ 260
1

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