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2SC1008 Datasheet دیتاشیت PDF دانلود

دیتاشیت - ETC - TRANSISTOR NPN

شماره قطعه 2SC1008
شرح مفصل TRANSISTOR NPN
تولید کننده ETC 
آرم ETC 


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2SC1008 شرح
DONG GUAN SHI HUA YUAN ELECTRON CO.,LTD.
TEL 86-769-5335378 86-769-5305266 FEX 86-769-5316189
2SC1008 TRANSISTOR NPN
FEATURES
Power dissipation
PCM : 0.8
Collector current
W Tamb=25
ICM : 0.7
A
Collector-base voltage
V(BR)CBO : 80
V
Operating and storage junction temperature range
TJ Tstg: -55 to +150
TO 92
1.EMITTER
2. BASE
3. COLLECTOR
123
ELECTRICAL CHARACTERISTICS Tamb=25
Parameter
Symbol
unless otherwise specified
Test conditions
MIN TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic= 100 A IE=0
80
V
Collector-emitter breakdown voltage V(BR)CEO IC= 10mA , IB=0
60
V
Emitter-base breakdown voltage
V(BR)EBO
IE= 10 A IC=0
8
V
Collector cut-off current
ICBO VCB=60 V , IE=0
0.1 A
Emitter cut-off current
IEBO VEB= 5 V , IC=0
0.1 A
DC current gain
hFE VCE= 2 V, IC=50m A
40
400
Collector-emitter saturation voltage
VCE(sat)
IC= 500mA, IB=50 mA
0.4 V
Base-emitter saturation voltage
VBE(sat)
IC=500mA, IB=50m A
1.1 V
Transition frequency
f T VCE=10V, IC= 50mA
30
MHz
CLASSIFICATION OF hFE
Rank
Range
R
40-80
O
70-140
Y
120-240
G
200-400

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