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Datasheet 1M110R5-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
1M1 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 1M110R5 | 1 and 1.5 WATT DC/DC CONVERTERS www.DataSheet.co.kr
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
Datasheet pdf - http://www.DataSheet4U.net/
 Reliability converter | | |
| 2 | 1M110Z | Glass Passivated Junction Silicon Zener Diodes 1N4740A - 1M200Z
Taiwan Semiconductor
CREAT BY ART
1W, 10V - 200V Glass Passivated Junction Silicon Zener Diodes
FEATURES
- Glass passivated chip junction - Low profile package - Built-in strain relief - Low inductance - Typical IR less than 5μA above 11V - Compliant to RoHS Directive 2011/65/EU an  Taiwan Semiconductor diode | | |
| 3 | 1M110Z | GLASS PASSIVATED JUNCTION SILICON ZENER DIODE 1N4741A THRU 1M200Z
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE VOLTAGE - 11 TO 200 Volts Power - 1.0 Watt
DO-41 FEATURES l l l l l l l Low profile package Built-in strain relief Glass passivated junction Low inductance Typical IR less than 5.0 A above 11V High temperature soldering :
260 /10 sec  TRSYS diode | | |
| 4 | 1M120Z | Glass Passivated Junction Silicon Zener Diodes 1N4740A - 1M200Z
Taiwan Semiconductor
CREAT BY ART
1W, 10V - 200V Glass Passivated Junction Silicon Zener Diodes
FEATURES
- Glass passivated chip junction - Low profile package - Built-in strain relief - Low inductance - Typical IR less than 5μA above 11V - Compliant to RoHS Directive 2011/65/EU an Taiwan Semiconductor diode | | |
| 5 | 1M120Z | GLASS PASSIVATED JUNCTION SILICON ZENER DIODE 1N4741A THRU 1M200Z
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE VOLTAGE - 11 TO 200 Volts Power - 1.0 Watt
DO-41 FEATURES l l l l l l l Low profile package Built-in strain relief Glass passivated junction Low inductance Typical IR less than 5.0 A above 11V High temperature soldering :
260 /10 sec TRSYS diode | | |
| 6 | 1M130Z | Glass Passivated Junction Silicon Zener Diodes 1N4740A - 1M200Z
Taiwan Semiconductor
CREAT BY ART
1W, 10V - 200V Glass Passivated Junction Silicon Zener Diodes
FEATURES
- Glass passivated chip junction - Low profile package - Built-in strain relief - Low inductance - Typical IR less than 5μA above 11V - Compliant to RoHS Directive 2011/65/EU an Taiwan Semiconductor diode | | |
| 7 | 1M130Z | GLASS PASSIVATED JUNCTION SILICON ZENER DIODE 1N4741A THRU 1M200Z
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE VOLTAGE - 11 TO 200 Volts Power - 1.0 Watt
DO-41 FEATURES l l l l l l l Low profile package Built-in strain relief Glass passivated junction Low inductance Typical IR less than 5.0 A above 11V High temperature soldering :
260 /10 sec TRSYS diode | |
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