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2SB939A fiches techniques PDF

Panasonic Semiconductor - Silicon PNP epitaxial planar type Darlington

Numéro de référence 2SB939A
Description Silicon PNP epitaxial planar type Darlington
Fabricant Panasonic Semiconductor 
Logo Panasonic Semiconductor 





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2SB939A fiche technique
Power Transistors
2SB939, 2SB939A
Silicon PNP epitaxial planar type Darlington
For midium-speed power switching
Complementary to 2SD1262 and 2SD1262A
s Features
q High foward current transfer ratio hFE
q High-speed switching
q N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to 2SB939
base voltage 2SB939A
VCBO
–60
–80
Collector to 2SB939
emitter voltage 2SB939A
VCEO
–60
–80
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VEBO
ICP
IC
PC
–7
–12
–8
45
1.3
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff
2SB939
current
2SB939A
Emitter cutoff current
Collector to emitter 2SB939
voltage
2SB939A
ICBO
IEBO
VCEO
VCB = –60V, IE = 0
VCB = –80V, IE = 0
VEB = –7V, IC = 0
IC = –30mA, IB = 0
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
hFE1*
hFE2
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
VCE = –3V, IC = –4A
VCE = –3V, IC = –8A
IC = –4A, IB = –8mA
IC = –4A, IB = –8mA
VCE = –10V, IC = – 0.5A, f = 1MHz
IC = –4A, IB1 = –8mA, IB2 = 8mA,
VCC = –50V
*hFE1 Rank classification
Rank
Q
P
hFE1 2000 to 5000 4000 to 10000
Internal Connection
B
8.5±0.2
6.0±0.5
Unit: mm
3.4±0.3
1.0±0.1
1.5max.
0.8±0.1
2.54±0.3
5.08±0.5
123
8.5±0.2
6.0±0.3
1.1max.
0.5max.
1:Base
2:Collector
3:Emitter
N Type Package
Unit: mm
3.4±0.3
1.0±0.1
0.8±0.1
2.54±0.3
5.08±0.5
R0.5
R0.5
1.1 max.
0 to 0.4
123
1:Base
2:Collector
3:Emitter
N Type Package (DS)
min typ
–60
–80
2000
500
15
0.5
2
1
C
max
–100
–100
–2
Unit
µA
mA
V
10000
–1.5 V
–2 V
MHz
µs
µs
µs
E
1

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