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PDF D2359 Data sheet ( Hoja de datos )
| Número de pieza | D2359 | |
| Descripción | NPN Transistor - 2SD2359 | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Transistor
2SD2359
Silicon NPN epitaxial planer type
For low-frequency amplification
s Features
q Low collector to emitter saturation voltage VCE(sat).
q Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
ICP
IC
PC*
Tj
Tstg
20
20
5
1.2
1
1
150
–55 ~ +150
V
V
V
A
A
W
˚C
˚C
* Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
4.5±0.1
1.6±0.2
45°
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
321
marking
Unit: mm
1.5±0.1
0.4±0.04
1:Base
2:Collector
3:Emitter
EIAJ:SC–62
Mini Power Type Package
Marking symbol : 1O
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to base voltage
ICBO
VCBO
VCB = 14V, IE = 0
IC = 10µA, IE = 0
1 µA
20 V
Collector to emitter voltage
Emitter to base voltage
VCEO
VEBO
IC = 1mA, IB = 0
IE = 10µA, IC = 0
20
5
V
V
Forward current transfer ratio
hFE
VCE = 2V, IC = 100mA
200 800
Collector to emitter saturation voltage VCE(sat)
IC = 500mA, IB = 10mA
0.11 0.2
V
Transition frequency
fT VCB = 6V, IE = –50mA, f = 200MHz 100 MHz
Collector output capacitance
Cob
VCB = 6V, IE = 0, f = 1MHz
23 pF
1
Datasheet pdf - http://www.DataSheet4U.net/
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet D2359.PDF ] | |
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