|
|
Numéro de référence | 2SB858 | ||
Description | Silicon PNP Triple Diffused | ||
Fabricant | Hitachi Semiconductor | ||
Logo | |||
1 Page
2SB857, 2SB858
Silicon PNP Triple Diffused
Application
Low frequency power amplifier complementary pair with 2SD1133 and 2SD1134
Outline
TO-220AB
1
23
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at TC = 25°C
Symbol
VCBO
VCEO
VEBO
IC
I C(peak)
PC * 1
Tj
Tstg
1. Base
2. Collector
(Flange)
3. Emitter
Ratings
2SB857
–70
–50
–5
–4
–8
40
150
–45 to +150
2SB858
–70
–60
–5
–4
–8
40
150
–45 to +150
Unit
V
V
V
A
A
W
°C
°C
|
|||
Pages | Pages 5 | ||
Télécharger | [ 2SB858 ] |
No | Description détaillée | Fabricant |
2SB850 | GENERAL PURPOSE POWER AMPLIFIER | New Jersey Semi-Conductor |
2SB850 | Trans GP BJT PNP 50V 4A | New Jersey Semiconductor |
2SB851 | (2SB851 / 2SB1278) Epitaxial Planar PNP Silicon Translstors | ROHM Semiconductor |
2SB852 | Transistor | TY Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |