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2SB857 fiches techniques PDF

Hitachi Semiconductor - Silicon PNP Triple Diffused

Numéro de référence 2SB857
Description Silicon PNP Triple Diffused
Fabricant Hitachi Semiconductor 
Logo Hitachi Semiconductor 





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2SB857 fiche technique
2SB857, 2SB858
Silicon PNP Triple Diffused
Application
Low frequency power amplifier complementary pair with 2SD1133 and 2SD1134
Outline
TO-220AB
1
23
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at TC = 25°C
Symbol
VCBO
VCEO
VEBO
IC
I C(peak)
PC * 1
Tj
Tstg
1. Base
2. Collector
(Flange)
3. Emitter
Ratings
2SB857
–70
–50
–5
–4
–8
40
150
–45 to +150
2SB858
–70
–60
–5
–4
–8
40
150
–45 to +150
Unit
V
V
V
A
A
W
°C
°C

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