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2SB852K fiches techniques PDF

ROHM Semiconductor - High-gain Amplifier Transistor (-32V/ -0.3A)

Numéro de référence 2SB852K
Description High-gain Amplifier Transistor (-32V/ -0.3A)
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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2SB852K fiche technique
Transistors
2SB852K
High-gain Amplifier Transistor (32V, 0.3A)
2SB852K
zFeatures
1) Darlington connection for high DC current gain.
2) Built-in 4kresistor between base and emitter.
3) Complements the 2SD1383K.
zPackaging specifications
Type
Package
hFE
Marking
Code
Basic ordering unit (pieces)
Denotes hFE
2SB852K
SMT3
B
U
T146
3000
zCircuit diagram
C
zExternal dimensions (Unit : mm)
2SB852K
SOT-346
2.9
0.4
(3)
1.1
0.8
(1)Emitter
(2)Base
(3)Collector
(2) (1)
0.95 0.95
1.9
0.15
Each lead has same dimensions
B
RBE 4k
E : Emitter
B : Base
C : Collector
E
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
RBE=0
Symbol
VCBO
VCES
VEBO
IC
PC
Tj
Tstg
Limits
40
32
6
0.3
0.2
150
55 to +150
Unit
V
V
V
A
W
°C
°C
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
1 Measured using pulse current.
2 Transition frequency of the device.
Symbol
BVCBO
BVCES
BVEBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
Min.
40
32
6
5000
Typ.
200
3
Max.
1
1
1.5
Unit
V
V
V
µA
µA
V
MHz
pF
Conditions
IC= −100µA
IC= −1mA
IE= −100µA
VCB= −24V
VEB= −4.5V
VCE= −5V, IC= −0.1A
IC= −200mA, IB= −0.4mA
1
VCE= −5V, IE=10mA, f=100MHz 2
VCB= −10V, IE=0A, f=1MHz
Rev.B
1/2

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