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Renesas Technology - Silicon N / P Channel Power MOS FET

Numéro de référence RJM0306JSP
Description Silicon N / P Channel Power MOS FET
Fabricant Renesas Technology 
Logo Renesas Technology 





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RJM0306JSP fiche technique
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Preliminary Datasheet
RJM0306JSP
Silicon N / P Channel Power MOS FET
High Speed Power Switching
REJ03G1571-0101
Rev.1.01
May 28, 2010
Features
Two elements each of N and P channels are incorporated (suitable for H-bridge circuit)
High density mounting
Low on-resistance
Capable of 4 V gate drive
High temperature D-S leakage guarantee
Avalanche rating
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 <FP-8DAV> )
S7
87 65
1 234
MOS4
Pch
8G
2G
MOS1
Nch
6G
D1
4G
S3
MOS3
Pch
D5
MOS2
Nch
Pin No.
1
2
3
4
5
6
7
8
Element
MOS1 (Nch)
MOS4 (Pch)
MOS1 (Nch)
MOS1 (Nch)
MOS2 (Nch)
MOS2 (Nch)
MOS2 (Nch)
MOS3 (Pch)
MOS3 (Pch)
MOS3 (Pch)
MOS4 (Pch)
MOS4 (Pch)
Electrode
Drain
Gate
Source
Gate
Drain
Gate
Source
Gate
Absolute Maximum Ratings
Item
Symbol
Value
MOS1, 2 (Nch) MOS3, 4 (Pch)
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel dissipation
VDSS
VGSS
ID
ID (pulse)Note 1
IAPNote 4
EARNote 4
PchNote 2
PchNote 3
30 –30
20 20
3.5 –3.5
28 –28
3.5 –3.5
1.22 1.22
1.5
2.2
Channel temperature
Tch
150
Storage temperature
Tstg –55 to +150
Notes: 1. PW 10 s, duty cycle 1%
2. 1 Drive operation: When using the glass epoxy board (FR4 40 40 1.6 mm), PW 10 s
3. 2 Drive operation: When using the glass epoxy board (FR4 40 40 1.6 mm), PW 10 s
4. Value at Tch = 25C, Rg 50
(Ta = 25°C)
Unit
V
V
A
A
A
mJ
W
W
C
C
REJ03G1571-0101 Rev.1.01
May 28, 2010
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