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Naina Semiconductor - Phase Control Thyristors

Numéro de référence 40NT
Description Phase Control Thyristors
Fabricant Naina Semiconductor 
Logo Naina Semiconductor 





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40NT fiche technique
www.DataSheet.co.kr
Naina Semiconductor Ltd.
40NT
Phase Control Thyristors, 40A (Stud and Lead Type)
Features
Improved glass passivation for high reliability
Exceptional stability at high temperatures
High di/dt and dv/dt capabilities
Metric thread type available
Low thermal resistance
Electrical Ratings (TJ = 250C, unless otherwise noted)
Parameters
Maximum on-state average current 180O
sinusoidal conduction @ TJ = 850C
Symbol
IT(AV)
Values
40
Maximum RMS on-state current
IT(RMS)
63
Maximum peak, one cycle non-repetitive
surge current
ITSM
600
Maximum I2t for fusing
I2t 800
Maximum repetitive peak on and off-state
voltage range
Maximum peak on-state voltage (TJ = 250C,
Ipeak = 79A)
Maximum holding current @ TJ
VRRM,
VDRM
VTM
IH
200 to
1600
1.2
150
Maximum latching current @TJ
IL 400
Maximum rate of rise of turn-on current,
VDRM ≤ 600V
di/dt
200
Critical rate of rise of
off-state voltage
Maximum gate
current required to
trigger
TJ = TJ maximum,
100% VDRM
TJ = TJ maximum,
67% VDRM
anode supply 6 V
resistive load @TJ
dv/dt
IGT
100
300
60
Maximum gate
voltage required to
trigger
VGT 2.0
Units
A
A
A
A2s
V
V
mA
mA
A/µs
V/µs
mA
V
TO-208AC (TO-65) & TO-209AC (TO-94)
Thermal and Mechanical Specifications (TJ = 250C, unless otherwise noted)
Parameters
Symbol
Maximum operating junction temperature range
TJ
Maximum storage temperature range
Maximum thermal resistance, junction to case
TStg
Rth(JC)
Mounting torque
Approximate weight
Values
- 60 to +125
- 60 to +125
0.9
0.2(min) to 0.3(max)
14
Units
0C
0C
0C/W
mkg
g
1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
[email protected] • www.nainasemi.com
Datasheet pdf - http://www.DataSheet4U.net/

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