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PDF 130NTD Data sheet ( Hoja de datos )
| Número de pieza | 130NTD | |
| Descripción | Thyristor-Diode Modules | |
| Fabricantes | Naina Semiconductor | |
| Logotipo |  |
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Naina Semiconductor Ltd.
130NTD
Thyristor – Diode Module
Features
• Improved glass passivation for high reliability
• Exceptional stability at high temperatures
• High di/dt and dv/dt capabilities
• Low thermal resistance
Maximum Ratings (TA = 250C unless otherwise noted)
Parameter
Symbol Values
Maximum average forward current @ TJ =
850C
IF(AV)
130
Maximum average RMS forward current
IF(RMS)
300
Maximum non-repetitive surge current @ t
= 10ms
IFSM
3300
Maximum I2t for fusing @ t = 10ms
I2t 51
Units
A
A
A
kA2s
M2 PACKAGE
Thermal & Mechanical Specifications (TA = 250C unless otherwise noted)
Parameter
Symbol
Operating junction temperature range
Thermal resistance, junction to case
TJ
Rth(JC)
Values
-65 to +125
0.18
Units
0C
0C/W
Electrical Characteristics (TA = 250C unless otherwise noted)
Parameter
Maximum average on-state current
Maximum repetitive peak reverse voltage range
Forward voltage drop
Gate current required to trigger
Gate voltage required to trigger
Holding current range
Maximum latching current
Critical rate of rise of off-state voltage
RMS isolated voltage
Symbol
IT(max)
VRRM
VFM
IGT
VGT
IH
IL
dv/dt
VISO
Values
130
200 to 1600
1.55
150
2.5
200
300
1000
3500
Units
A
V
V
mA
V
mA
mA
V/µs
V
1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
[email protected] • www.nainasemi.com
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 130NTD.PDF ] | |
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