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Datasheet 16NSF-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
16N Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 16N03L | RFD16N03L S E M I C O N D U C T O R
RFD16N03L, RFD16N03LSM
16A, 30V, Avalanche Rated N-Channel Logic Level Enhancement-Mode Power MOSFETs
Packaging
JEDEC TO-251AA
SOURCE DRAIN GATE DRAIN (FLANGE)
December 1995
Features
• 16A, 30V • rDS(ON) = 0.022Ω • Temperature Compensating PSPICE Model • Can be  Fairchild Semiconductor data | | |
| 2 | 16N05 | RFD16N05 RFD16N05, RFD16N05SM
Data Sheet November 2003
16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs
The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization o Fairchild Semiconductor data | | |
| 3 | 16N15 | FQP16N15
QFET
% % % % % % % &' ()&*+,-.+ &'Ω/,.&+, 0 1 23
4 01 3+4
&++5 !
6
!!$ " &7*°
8
9
Fairchild Semiconductor data | | |
| 4 | 16N25 | FQP16N25 FQP16N25 — N-Channel QFET® MOSFET
FQP16N25
N-Channel QFET® MOSFET
250 V, 16 A, 230 mΩ
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailor Fairchild Semiconductor data | | |
| 5 | 16N25E | MTB16N25E MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTB16N25E/D
Designer's
TMOS E-FET .™ High Energy Power FET D 2 PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate
The D2PAK package has the capability of housing a larger die than any existing surface mount package whi  Motorola Semiconductors data | | |
| 6 | 16N50 | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 16N50
Preliminary Power MOSFET
16 Amps, 500 Volts N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 16N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-  Unisonic Technologies mosfet | | |
| 7 | 16N50C | SIHF16N50C www.DataSheet.co.kr
SiHP16N50C, SiHB16N50C, SiHF16N50C
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
TO-220AB TO-220 FULLPAK
FEATURES
560 V VGS = 10 V 68 17.6 21.8 Single
D
• Low Figure-of-Merit Ron x Qg
0.38
• 1  Vishay Siliconix data | |
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