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PDF 2SB792A Data sheet ( Hoja de datos )
| Número de pieza | 2SB792A | |
| Descripción | Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification) | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Transistor
2SB792, 2SB792A
Silicon PNP epitaxial planer type
For high breakdown voltage low-noise amplification
Complementary to 2SD814
Unit: mm
s Features
q High collector to emitter voltage VCEO.
q Low noise voltage NV.
q Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
s Absolute Maximum Ratings (Ta=25˚C)
0.65±0.15
+0.2
2.8 –0.3
+0.25
1.5 –0.05
0.65±0.15
1
3
2
Parameter
Collector to 2SB792
base voltage 2SB792A
Collector to 2SB792
emitter voltage 2SB792A
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–150
–185
–150
–185
–5
–100
–50
200
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
0.1 to 0.3
0.4±0.2
1:Base
2:Emitter
3:Collector
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
Marking symbol : I(2SB792)
2F(2SB792A)
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to emitter 2SB792
voltage
2SB792A
ICBO
VCEO
VCB = –100V, IE = 0
IC = –100µA, IB = 0
–150
–185
–1 µA
V
Emitter to base voltage
Forward current
2SB792
transfer ratio
2SB792A
VEBO
hFE*
IE = –10µA, IC = 0
VCE = –5V, IC = –10mA
–5 V
130 450
130 330
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
VCE(sat)
fT
Cob
Noise voltage
NV
IC = –30µA, IB = –3mA
VCB = –10V, IE = 10mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
VCE = –10V, IC = –1mA, GV = 80dB,
Rg = 100kΩ, Function = FLAT
–1 V
200 MHz
4 pF
150 mV
*hFE Rank classification
Rank
RST
hFE
Marking 2SB792
Symbol
2SB792A
130 ~ 220
IR
2FR
185 ~ 330
IS
2FS
260 ~ 450
IT
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1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SB792A.PDF ] | |
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