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2SB776 fiches techniques PDF

Sanyo Semicon Device - PNP Epitaxial Planar Silicon Transistor

Numéro de référence 2SB776
Description PNP Epitaxial Planar Silicon Transistor
Fabricant Sanyo Semicon Device 
Logo Sanyo Semicon Device 





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2SB776 fiche technique
Ordering number:678F
2SB776 : PNP Epitaxial Planar Silicon Transistor
2SD896 : NPN Triple Diffused Planar Silicon Transistor
2SB776/2SD896
100V/7A, AF 40W Output Applications
Features
· Capable of being mounted easily because of one-
point fixing type plastic molded package
(Interchangeable with TO-3).
· Wide ASO because of on-chip ballast resistance.
· Goode dependence of fT on current and excellent
high frequency responce.
Package Dimensions
unit:mm
2022A
[2SB776/2SD896]
The descriptions in parentheses are for the 2SB776 only ;
other descriptions than those in parentheses are common
to the 2SB776 and 2SD896.
1 : Base
2 : Collector
3 ; Emitter
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25˚C
Conditions
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCB=(–)80V, IE=0
VEB=(–)4V, IC=0
VCE=(–)5V, IC=(–)1A
VCE=(–)5V, IC=(–)4A
VCE=(–)5V, IC=(–)1A
VCB=(–)10V, f=1MHz
Base-to-Emitter Voltage
VBE
VCE=(–)5V, IC=(–)1A
* : The 2SB776/2SD896 are classified by 1A hFE as follows : 60 D 120 100 E 200
SANYO : TO-3PB
Ratings
(–)120
(–)100
(–)6
(–)7
(–)11
70
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
Ratings
min typ
60*
20
15
(200)
140
max
(–)0.1
(–)0.1
200*
(–)1.5
Unit
mA
mA
MHz
pF
pF
V
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91098HA (KT)/90595MO (KOT)/4017KI/1115MW, TS 8-341G/7089 No.678–1/4

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