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PDF JCS8N65B Data sheet ( Hoja de datos )
| Número de pieza | JCS8N65B | |
| Descripción | N-CHANNEL MOSFET | |
| Fabricantes | JILIN SINO-MICROELECTRONICS | |
| Logotipo |  |
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N 沟道增强型场效应晶体管
R N-CHANNEL MOSFET
JCS8N65B
主要参数 MAIN CHARACTERISTICS
ID 7.0 A
VDSS
60V
Rdson（@Vgs=10V） 1. Ω
Qg 25 nC
封装 Package
用途
z 高频开关电源
z 电子镇流器
z UPS 电源
APPLICATIONS
z High efficiency switch
mode power supplies
z Electronic lamp ballasts
based on half bridge
z UPS
产品特性
z低栅极电荷
z低 Crss (典型值 16pF)
z开关速度快
z产品全部经过雪崩测试
z高抗 dv/dt 能力
zRoHS 产品
FEATURES
zLow gate charge
zLow Crss (typical 16pF )
zFast switching
z100% avalanche tested
zImproved dv/dt capability
zRoHS product
订货信息 ORDER MESSAGE
订货型号
Order codes
印记
Marking
JCS8N65CB-O-C-N-B
JCS8N65FB-O-F-N-B
JCS8N65CB
JCS8N65FB
封装
Package
TO-220C
TO-220MF
无卤素
Halogen
Free
否 NO
否 NO
包 装 器件重量
Packaging Device Weight
条管 Tube 2.15 g(typ)
条管 Tube 2.20 g(typ)
版本：201011A
1/10
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
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R
特征曲线 ELECTRICAL CHARACTERISTICS (curves)
JCS8N65B
On-Region Characteristics
VGS
Top 15V
10V
8V
10 7V
6.5V
6V
5.5V
Bottom 5V
Transfer Characteristics
10
25℃
150℃
1
Notes：
1 1. 250μs pulse test
2. TC=25℃
Notes：
1.250μs pulse test
2.VDS=40V
0.1
1 10 2 4 6 8 10
VDS [V]
VGS [V]
On-Resistance Variation vs.
Drain Current and Gate Voltage
Body Diode Forward Voltage Variation
vs. Source Current and Temperature
1.40
1.35
1.30
1.25 VGS=10V
1.20
1.15 VGS=20V
1.10
1.05
1.00 Note ：Tj=25℃
0.95
02468
ID [A]
Capacitance Characteristics
10
10
25℃
1
150℃
Notes：
1. 250μs pulse test
2. VGS =0V
0.1
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
VSD [V]
Gate Charge Characteristics
12
VDS=480V
10 VDS=300V
VDS=120V
8
6
4
2
0
0 2 4 6 8 10 12 14 16 18 20
Qg Toltal Gate Charge [nC]
版本：201011A
5/10
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet JCS8N65B.PDF ] | |
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