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PDF 2SB767 Data sheet ( Hoja de datos )
| Número de pieza | 2SB767 | |
| Descripción | Silicon PNP epitaxial planer type(For low-frequency output amplification) | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SB767 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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Transistor
2SB767
Silicon PNP epitaxial planer type
For low-frequency output amplification
Complementary to 2SD875
Unit: mm
s Features
q Large collector power dissipation PC.
q High collector to emitter voltage VCEO.
q Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
–80
V
Collector to emitter voltage VCEO
–80
V
Emitter to base voltage
VEBO
–5
V
Peak collector current
ICP
–1 A
Collector current
IC
– 0.5
A
Collector power dissipation PC* 1 W
Junction temperature
Tj
150 ˚C
Storage temperature
Tstg –55 ~ +150 ˚C
* Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
4.5±0.1
1.6±0.2
1.5±0.1
45°
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
321
marking
0.4±0.04
1:Base
2:Collector
3:Emitter
EIAJ:SC–62
Mini Power Type Package
Marking symbol : C
s Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
ICBO
VCBO
VCEO
VEBO
hFE1*1
hFE2
VCE(sat)
VBE(sat)
fT
Cob
Conditions
VCB = –20V, IE = 0
IC = –10µA, IE = 0
IC = –100µA, IB = 0
IE = –10µA, IC = 0
VCE = –10V, IC = –150mA*2
VCE = –5V, IC = –500mA*2
IC = –300mA, IB = –30mA*2
IC = –300mA, IB = –30mA*2
VCB = –10V, IE = 50mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
*1hFE1 Rank classification
Rank
Q
hFE1
Marking Symbol
90 ~ 155
CQ
R
130 ~ 220
CR
S
185 ~ 330
CS
min typ max Unit
– 0.1 µA
–80 V
–80 V
–5 V
90 330
50 100
– 0.2 –0.4
V
– 0.85 –1.2
V
120 MHz
20 30 pF
*2 Pulse measurement
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SB767.PDF ] | |
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