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2SC1061 fiches techniques PDF

Inchange Semiconductor - Silicon NPN Power Transistors

Numéro de référence 2SC1061
Description Silicon NPN Power Transistors
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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2SC1061 fiche technique
www.DataSheet.co.kr
Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC1061
DESCRIPTION
With TO-220 package
Low saturation voltage
Complement to type 2SA671
Note: type 2SC1060 with short pin
APPLICATIONS
For use in low frequency power
amplifier applications
PINNING
PIN
DESCRIPTION
1 Base
2
Collector;connected to
mounting base
3 Emitter
固电半导体Absolute maximum ratings (Ta=25 )
INCHANGE SEMICONDUCTORSYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current (DC)
CONDITIONS
Open emitter
Open base
Open collector
VALUE
50
50
4
3
UNIT
V
V
V
A
ICM Collector current-peak
8A
IB Base current (DC)
0.5 A
PC Collector power dissipation
TC=25
25 W
Tj Junction temperature
150
Tstg Storage temperature
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
Thermal resistance from junction to case
MAX
5.0
UNIT
/W
Datasheet pdf - http://www.DataSheet4U.net/

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