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PDF VBUS054B-HS3 Data sheet ( Hoja de datos )
| Número de pieza | VBUS054B-HS3 | |
| Descripción | 4-Line BUS-port ESD-protection | |
| Fabricantes | Vishay Siliconix | |
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4-Line BUS-port ESD-protection
VBUS054B-HS3
Vishay Semiconductors
Features
• Ultra compact LLP75-6A package
• 4-line USB ESD-protection
65
4
• Low leakage current
• Low load capacitance CD = 0.8 pF
• ESD-protection to IEC 61000-4-2
± 15 kV contact discharge
± 15 kV air discharge
• Lead (Pb)-free component
19957
123
20397
1
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Marking (example only)
XX
YY
21001
Ordering Information
Device name
VBUS054B-HS3
Ordering code
VBUS054B-HS3-GS08
Dot = Pin 1 marking
XX = Date code
YY = Type code (see table below)
Taped units per reel
(8 mm tape on 7" reel)
3000
Minimum order quantity
15 000
Package Data
Device name
Package
name
Marking
code
Weight
Molding compound
flammability rating
VBUS054B-HS3
LLP75-6A
U6 5.1 mg
UL 94 V-0
Moisture sensitivity level
MSL level 1
(according J-STD-020)
Soldering conditions
260 °C/10 s at terminals
Absolute Maximum Ratings
Rating
Peak pulse current
Peak pulse power
ESD immunity
Operating temperature
Storage temperature
Test conditions
Pin 1, 3, 4 or 6 to pin 2
acc. IEC 61000-4-5; tP = 8/20 µs; single shot
Pin 5 to pin 2
acc. IEC 61000-4-5; tP = 8/20 µs; single shot
Pin 1, 3, 4 or 6 to pin 2
acc. IEC 61000-4-5; tP = 8/20 µs; single shot
Pin 5 to pin 2
acc. IEC 61000-4-5; tP = 8/20 µs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
Symbol
IPPM
IPPM
PPP
PPP
VESD
VESD
TJ
TSTG
Value
3
10
45
200
± 15
± 15
- 40 to + 125
- 55 to + 150
Unit
A
A
W
W
kV
kV
°C
°C
* Please see document “Vishay Green and Halogen-Free Definitions (5-2008)” http://www.vishay.com/doc?99902
Document Number 81586
Rev. 1.4, 07-Oct-08
For technical support, please contact: [email protected]
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
www.DataSheet.co.kr
VBUS054B-HS3
Vishay Semiconductors
Background knowledge:
A zener- or avalanche diode is an ideal device for "cutting" or "clamping" voltage spikes or voltage transients
down to low and uncritical voltage values. The breakthrough voltage can easily be adjusted by the chip-
technology to any desired value within a wide range. Up to about 6 V the "zener-effect" (tunnel-effect) is
responsible for the breakthrough characteristic. Above 6 V the so-called "avalanche-effect" is responsible. This
is a more abrupt breakthrough phenomenon. Because of the typical "Z-shape" of the current-voltage-curve of
such diodes, these diodes are generally called "Z-diode" (= zener or avalanche diodes). An equally important
parameter for a protection diode is the ESD- and surge-power that allows the diode to short current in the pulse
to ground without being destroyed.
This requirement can be adjusted by the size of the silicon chip (crystal). The bigger the active area the higher
the current that the diode can short to ground.
But the active area is also responsible for the diode capacitance - the bigger the area the higher the
capacitance.
The dilemma is that a lot of applications require an effective protection against more then 8 kV ESD while the
capacitance must be lower then 5 pF! This is well out of the normal range of a Z-diode. However, a Protection
diode with a low capacitance PN-diode (switching diode or junction diode) in series with a Z-diode, can fulfil
both requirements simultaneously: low capacitance AND high ESD- and/or surge immunity become possible!
A small signal (Vpp < 100 mV) just sees the low capacitance of the PN-diode, while the big capacitance of the
Z-diode in series remains "invisible".
D
ZD C TOT
Such a constellation with a Z-diode and a small
PN-diode (with low capacitance) in series (anti-serial)
is a real unidirectional protection device. The
clamping current can only flow in one direction
(forward) in the PN-diode. The reverse path is
blocked.
CD = 0.4 pF
CZ D = 110 pF
20400
I/O
D
ZD
Gnd
20401
Another PN-diode "opens" the back path so that the
protection device becomes bidirectional! Because the
clamping voltage levels in forward and reverse
directions are different, such a protection device has
a Bidirectional and Asymmetrical clamping behaviour
(BiAs) just like a single Z-diode.
I/O
D1
ZD
Gnd
D2
20404
Document Number 81586
Rev. 1.4, 07-Oct-08
For technical support, please contact: [email protected]
www.vishay.com
5
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