|
|
PDF 2SB1657 Data sheet ( Hoja de datos )
| Número de pieza | 2SB1657 | |
| Descripción | AUDIO FREQUENCY AMPLIFIER/ SWITCHING PNP SILICON EPITAXIAL TRANSISTORS | |
| Fabricantes | NEC | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de 2SB1657 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
DATA SHEET
SILICON TRANSISTOR
2SB1657
AUDIO FREQUENCY AMPLIFIER, SWITCHING
PNP SILICON EPITAXIAL TRANSISTORS
FEATURES
• Low VCE(sat)
VCE(sat) = −0.15 V Max (@lC/lB = 0.5 A/25 mA)
• High DC Current Gain
hFE = 150 to 600 (@VCE = −2.0 V, lC = −0.5 A)
ABSOLUTE MAXIMUM RATINGS
Maximum Voltage and Current (TA = 25 °C)
Collector to Base Voltage
VCB0
−30 V
Collector to Emitter Volteage
VCE0
−30 V
Emitter to Base Voltage
VEB0
−6.0 V
Collector Current (DC)
IC(DC)
−5.0 A
Collector Current (Pulse)*
IC(Pulse)
−8.0 A
Base Current (DC)
IB(DC)
−1.0 A
* PW ≤ 10ms, Duty Cycle ≤ 10 %
Maximum Power Dissipation
Total Power Dissipation (TC = 25 °C) PT
10 W
Total Power Dissipation (TA = 25 °C) PT
1.0 W
Maximum Temperature
Junction Temperature
Tj 150 °C
Storage Temperature
Tstg −55 to 150 °C
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
characteristics
Collector Cutoff Currnet
Emitter Cutoff Current
DC Current Gain
DC Current Gain
Collector Saturation Voltage
Collector Saturation Voltage
Collector Saturation Voltage
Collector Saturation Voltage
Base Saturation Voltage
Gain Bandwidth Product
Output Capacitance
SYMBOL
ICB0
IEB0
hFE1
hFE2
VCE(sat)1
VCE(sat)2
VCE(sat)3
VCE(sat)4
VBE(sat)
fT
Cob
TEST CONDITIONS
VCB = −30 V, IE = 0
VEB = −6.0 V, IC = 0
VCE = −2.0 V, IC = −0.5 A
VCE = −2.0 V, IC = −3.0 A
IC = −0.5 A, IB = −25 mA
IC = −1.0 A, IB = −50 mA
IC = −2.0 A, IB = −100 mA
IC = −3.0 V, IB = −75 mA
IC = −1.0 A, IB = −50 mA
VCE = −10 V, IE = −50 mA
VCB = −10 V, IE = 0, f = 1 MHz
PACKAGE DIMENSIONS
in millimeters (inches)
8.5 MAX.
(0.334 MAX.)
2.8 MAX.
(0.110 MAX.)
φ 3.2 ± 0.2 (φ 0.126)
1 23
1.2
(0.047)
0.8+−00..0058
(0.031)
2.3 2.3
(0.090) (0.090)
0.55+−00..0058
(0.021)
1.2
(0.047)
1. Emitter
2. Collector connected to mounting plane
3. Base
MIN.
150
70
TYP.
−0.08
−0.13
−0.24
−0.46
−0.83
75
60
MAX.
−100
−100
600
−0.15
−0.25
−0.40
−1.0
−1.50
UNIT
nA
nA
−
−
V
V
V
V
V
MHz
pF
The information in this document is subject to change without notice.
Document No. D10627EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
© 1996
1 page  
2SB1657
COLLECTOR SATURATION VOLTAGE vs COLLECTOR CURRENT
−10
IC/IB = 20
−1
−0.1
−0.01
−0.01
−0.1 −1
IC - Collector Current - A
−10
BASE SATURATION VOLTAGE vs COLLECTOR CURRENT
−10
IC/IB = 20
−1
−0.1
−0.01
−0.01
−0.1 −1
IC - Collector Current - A
−10
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2SB1657.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 2SB1653 | Silicon PNP triple diffusion planar type(For power switching) |  Panasonic Semiconductor |
| 2SB1655 | Power Transistor (-60V/ -3A) |  ROHM Semiconductor |
| 2SB1655 | SILICON POWER TRANSISTOR |  SavantIC |
| 2SB1657 | AUDIO FREQUENCY AMPLIFIER/ SWITCHING PNP SILICON EPITAXIAL TRANSISTORS | NEC |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |