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PDF 2SB1643 Data sheet ( Hoja de datos )
| Número de pieza | 2SB1643 | |
| Descripción | Silicon PNP epitaxial planar type(For power amplification) | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SB1643 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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Power Transistors
2SB1643
Silicon PNP epitaxial planar type
For power amplification
8.5±0.2
6.0±0.5
Unit: mm
3.4±0.3
1.0±0.1
s Features
q High collector to emitter VCEO
q High collector power dissipation PC
q N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO
VCEO
VEBO
ICP
IC
IB
PC
–60
–60
–6
–6
–3
–1
40
1.3
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
A
W
˚C
˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
ICBO
ICEO
IEBO
VCEO
hFE*
VCE(sat)
fT
VCB = –60V, IE = 0
VEB = –40V, IC = 0
VEB = –6V, IC = 0
IC = –25mA, IB = 0
VCE = –4V, IC = – 0.5A
IC = –2A, IB = – 0.05A
VCE = –12V, IC = – 0.2A, f = 10MHz
1.5max.
0.8±0.1
2.54±0.3
5.08±0.5
123
8.5±0.2
6.0±0.3
1.1max.
0.5max.
1:Base
2:Collector
3:Emitter
N Type Package
Unit: mm
3.4±0.3
1.0±0.1
0.8±0.1
2.54±0.3
5.08±0.5
R0.5
R0.5
1.1 max.
0 to 0.4
123
1:Base
2:Collector
3:Emitter
N Type Package (DS)
min typ max Unit
–100 µA
–100 µA
–100 µA
–60 V
300 700
–1 V
30 MHz
*hFE Rank classification
Rank
Q
hFE 300 to 500
P
400 to 700
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SB1643.PDF ] | |
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