|
|
Numéro de référence | 2SB1638 | ||
Description | Silicon PNP epitaxial planar type(For low-voltage switching) | ||
Fabricant | Panasonic Semiconductor | ||
Logo | |||
Power Transistors
2SB1638, 2SB1638A
Silicon PNP epitaxial planar type
For low-voltage switching
7.0±0.3
3.0±0.2
Unit: mm
3.5±0.2
s Features
q Low collector to emitter saturation voltage VCE(sat)
q Satisfactory linearity of foward current transfer ratio hFE
q I type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to 2SB1638
base voltage 2SB1638A
VCBO
–40
–50
Collector to 2SB1638
emitter voltage 2SB1638A
VCEO
–20
–40
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VEBO
ICP
IC
PC
–5
–12
–7
15
1.3
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff
2SB1638
current
2SB1638A
Emitter cutoff current
Collector to emitter 2SB1638
voltage
2SB1638A
ICBO
IEBO
VCEO
VCB = –40V, IE = 0
VCB = –50V, IE = 0
VEB = –5V, IC = 0
IC = –10mA, IB = 0
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
hFE1
hFE2*
VCE(sat)
VBE(sat)
fT
Cob
ton
tstg
tf
VCE = –2V, IC = – 0.1A
VCE = –2V, IC = –2A
IC = –5A, IB = – 0.16A
IC = –5A, IB = – 0.16A
VCE = –10V, IC = – 0.5A, f = 10MHz
VCB = –10V, IE = 0, f = 1MHz
IC = –2A, IB1 = –66mA, IB2 = 66mA
1.1±0.1
0.75±0.1
0.85±0.1
0.4±0.1
2.3±0.2
4.6±0.4
123
7.0±0.3
2.0±0.2
1:Base
2:Collector
3:Emitter
I Type Package
Unit: mm
3.5±0.2
0 to 0.15
3.0±0.2
1.1±0.1
0.75±0.1
123
2.3±0.2
4.6±0.4
2.5
0.5 max.
0.9±0.1
0 to 0.15
1:Base
2:Collector
3:Emitter
I Type Package (Y)
min typ max Unit
–50
µA
–50
–50 µA
–20
V
–40
45
90 260
– 0.6
V
–1.5 V
150 MHz
140 pF
0.1 µs
0.5 µs
0.1 µs
*hFE2 Rank classification
Rank
Q
P
hFE2 90 to 180 130 to 260
1
|
|||
Pages | Pages 3 | ||
Télécharger | [ 2SB1638 ] |
No | Description détaillée | Fabricant |
2SB1631 | Silicon PNP epitaxial planar type(For power amplification) | Panasonic Semiconductor |
2SB1638 | Silicon PNP epitaxial planar type(For low-voltage switching) | Panasonic Semiconductor |
2SB1638A | Silicon PNP epitaxial planar type(For low-voltage switching) | Panasonic Semiconductor |
2SB1639 | High-current gain Power Transistor (-60V/ -3A) | ROHM Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |