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PDF RFHA1023 Data sheet ( Hoja de datos )
| Número de pieza | RFHA1023 | |
| Descripción | 225W GaN WIDE-BAND PULSED POWER AMPLIFIER | |
| Fabricantes | RF Micro Devices | |
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RFHA1023
225W GaN WIDE-BAND PULSED
POWER AMPLIFIER
Package: Flanged Ceramic, 2 Pin
Features
Wideband Operation: 1.2GHz
to 1.4GHz
Advanced GaN HEMT
Technology
Advanced Heat Sink
Technology
Optimized Evaluation Board
Layout for 50: Operation
Integrated Matching
Components for High
Terminal Impedances
36V Operation Typical
Performance:
Output Pulsed Power: 225W
Pulse Width: 1ms, Duty Cycle
10 %
Small Signal Gain: 15dB
High Efficiency (55%)
- 40°C to 85°C Operating
Temperature
Applications
Radar
Air Traffic Control and
Surveillance
General Purpose Broadband
Amplifiers
RF IN
VGQ
Pin 1 (CUT)
GND
BASE
RF OUT
VDQ
Pin 2
Functional Block Diagram
Product Description
The RFHA1023 is a 36V 225W high power discrete amplifier designed for L-Band
pulsed radar, Air Traffic Control and Surveillance and general purpose broadband
amplifier applications. Using an advanced high power density Gallium Nitride (GaN)
semiconductor process, these high performance amplifiers achieve high output
power, high efficiency and flat gain over a broad frequency range in a single pack-
age. The RFHA1023 is a matched power transistor packaged in a hermetic, flanged
ceramic package. The package provides excellent thermal stability through the use
of advanced heat sink and power dissipation technologies. Ease of integration is
accomplished through the incorporation of single, optimized matching networks
that provide wideband gain and power performance in a single amplifier.
Ordering Information
RFHA1023
225W GaN Wide-Band Pulsed
RFHA1023PCBA-410 Fully Assembled Evaluation Board Optimized for 1.2GHz to
1.4GHz; 36V
DS110630
Optimum Technology Matching® Applied
GaAs HBT
SiGe BiCMOS
9GaAs pHEMT
GaN HEMT
GaAs MESFET
Si BiCMOS
Si CMOS
InGaP HBT
SiGe HBT
Si BJT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
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RFHA1023
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17
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15
14
13
12
11
46
Gain/ Efficiency vs. Pout, f = 1300MHz
(Pulsed 10% duty cycle, 1mS, Vd = 36V, Idq = 440mA)
Gain
Drain Eff
47 48 49 50 51 52 53
Pout, Output Power (dBm)
70
60
50
40
30
20
10
0
54
Pout/DE vs. Pulse Width, f = 1300MHz
(Pulsed 10% duty cycle, Vd = 36V, Idq = 440mA)
300
275
250
225
200
10
Pout
Drain Efficiency
100
Pulse Width (usec)
1000
Pout/DE vs. Duty Cycle, f = 1300MHz
(Pulsed ,1ms pulse, Vd = 36V, Idq = 440mA)
300
275
250
225
200
10
Pout Eff
30 50
Duty Cycle (%)
65
62.5
60
57.5
55
52.5
50
47.5
45
70
65
62.5
60
57.5
55
52.5
50
47.5
45
DS110630
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
5 of 10
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5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet RFHA1023.PDF ] | |
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