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PDF 2SB1599 Data sheet ( Hoja de datos )
| Número de pieza | 2SB1599 | |
| Descripción | Silicon PNP epitaxial planer type(For power amplification) | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Transistor
2SB1599
Silicon PNP epitaxial planer type
For power amplification
Complementary to 2SD2457
Unit: mm
s Features
q Low collector to emitter saturation voltage VCE(sat).
q Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
–50
V
Collector to emitter voltage VCEO
–40
V
Emitter to base voltage
VEBO
–5
V
Peak collector current
ICP
–3 A
Base current
IB
– 0.6
A
Collector power dissipation PC* 1 W
Junction temperature
Tj
150 ˚C
Storage temperature
Tstg –55 ~ +150 ˚C
* Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
4.5±0.1
1.6±0.2
1.5±0.1
45°
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
321
marking
0.4±0.04
1:Base
2:Collector
3:Emitter
EIAJ:SC–62
Mini Power Type Package
Marking symbol : 1X
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
ICBO
ICEO
IEBO
VCBO
VCEO
hFE*
VCE(sat)
VBE(sat)
fT
Cob
Conditions
VCB = –20V, IE = 0
VCE = –12V, IB = 0
VEB = –5V, IC = 0
IC = –1mA, IE = 0
IC = –10mA, IB = 0
VCE = –5V, IC = –1A
IC = –1.5A, IB = –0.15A
IC = –2A, IB = –0.2A
VCB = –5V, IE = 0.5A, f = 200MHz
VCB = –5V, IE = 0, f = 1MHz
min typ max Unit
–1 µA
–100 µA
–100 µA
–50 V
–40 V
50 220
– 0.4 –1
V
–1.5 V
150 MHz
70 pF
*hFE Rank classification
Rank
P
hFE 50 ~ 100
Q
80 ~ 160
R
100 ~ 220
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SB1599.PDF ] | |
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