DataSheetWiki


2SB1587 fiches techniques PDF

Sanken electric - Silicon PNP Epitaxial Planar Transistor(Audio/ Series Regulator and General Purpose)

Numéro de référence 2SB1587
Description Silicon PNP Epitaxial Planar Transistor(Audio/ Series Regulator and General Purpose)
Fabricant Sanken electric 
Logo Sanken electric 





1 Page

No Preview Available !





2SB1587 fiche technique
Darlington
2SB1587
(70) E
B
Equivalent circuit C
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2438) Application : Audio, Series Regulator and General Purpose
sAbsolute maximum ratings (Ta=25°C) sElectrical Characteristics
(Ta=25°C) External Dimensions FM100(TO3PF)
Symbol
2SB1587
Unit
Symbol
Conditions
2SB1587 Unit
VCBO
–160
V ICBO
VCB=–160V
–100max
µA
VCEO
–150
V IEBO
VEB=–5V
–100max
µA
VEBO
–5
V V(BR)CEO
IC=–30mA
–150min
V
IC
–8
A hFE
VCE=–4V, IC=–6A
5000min
IB
–1
A
VCE(sat)
IC=–6A, IB=–6mA
–2.5max
V
PC
75(Tc=25°C)
W
VBE(sat)
IC=–6A, IB=–6mA
–3.0max
V
Tj
150 °C fT
VCE=–12V, IE=1A
65typ
MHz
Tstg
–55 to +150
°C
COB
VCB=–10V, f=1MHz
160typ
pF
hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
IB2 ton tstg
tf
(V)
() (A)
(V)
(V)
(mA)
(mA)
(µs)
(µs)
(µs)
–60 10 –6 –10 5 –6
6 0.7typ 3.6typ 0.9typ
15.6±0.2
5.5±0.2
3.45 ±0.2
ø3.3±0.2
a
b
5.45±0.1
1.75
2.15
1.05
+0.2
-0.1
5.45±0.1
0.65
+0.2
-0.1
0.8
3.35
1.5 4.4 1.5
Weight : Approx 6.5g
a. Type No.
B C E b. Lot No.
I C– V CE Characteristics (Typical)
–8 –2.0mA –1.8mA –1.5mA
–1.3mA
–6 –1.0mA
–0.8mA
–4 –0.5mA
IB=–0.3mA
–2
V CE( s a t ) – I B Characteristics (Typical)
–3
–2 –8A
–6A
IC=–4A
–1
I C– V BE Temperature Characteristics (Typical)
(VCE=–4V)
–8
–6
–4
–2
0
0 –2 –4 –6
Collector-Emitter Voltage VCE(V)
0
–0.2 –0.5 –1
–5 –10
Base Current IB(mA)
–50 –100 –200
0
0 –1 –2 –3
Base-Emittor Voltage VBE(V)
h FE– I C Characteristics (Typical)
40,000
(VCE=–4V)
Typ
10,000
5,000
h FE– I C Temperature Characteristics (Typical)
50000
125˚C
(VCE=–4V)
10000
5000
25˚C
–30˚C
θ j-a– t Characteristics
4
1
0.5
2,000
–0.2
–0.5
–1
Collector Current IC(A)
–5 –8
1000
–0.2
–0.5
–1
Collector Current IC(A)
0.2
–5 –8
1
5 10
50 100
Time t(ms)
500 1000 2000
f T– I E Characteristics (Typical)
(VCE=–12V)
100
80
Typ
60
40
20
0
0.02
0.05
0.1 0.5 1
Emitter Current IE(A)
58
Safe Operating Area (Single Pulse)
–20
–10
–5
DC 100m10sms
–1
–0.5
–0.1
Without Heatsink
Natural Cooling
–0.05
–2
–5 –10
–50 –100 –200
Collector-Emitter Voltage VCE(V)
Pc–Ta Derating
80
60
40
20
Without Heatsink
3.5
0
0 25 50
75
100 125
Ambient Temperature Ta(˚C)
150
49

PagesPages 1
Télécharger [ 2SB1587 ]


Fiche technique recommandé

No Description détaillée Fabricant
2SB1580 Power Transistor ( 100V /2A) ROHM Semiconductor
ROHM Semiconductor
2SB1587 Silicon PNP Epitaxial Planar Transistor(Audio/ Series Regulator and General Purpose) Sanken electric
Sanken electric
2SB1587 SILICON POWER TRANSISTOR SavantIC
SavantIC
2SB1587 Trans Darlington PNP 150V 8A 3-Pin(3+Tab) TO-3PF New Jersey Semiconductor
New Jersey Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche