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2SB1570 fiches techniques PDF

Sanken electric - Silicon PNP Epitaxial Planar Transistor(Audio/ Series Regulator and General Purpose)

Numéro de référence 2SB1570
Description Silicon PNP Epitaxial Planar Transistor(Audio/ Series Regulator and General Purpose)
Fabricant Sanken electric 
Logo Sanken electric 





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2SB1570 fiche technique
Darlington
2SB1570
(70) E
B
Equivalent circuit C
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2401) Application : Audio, Series Regulator and General Purpose
sAbsolute maximum ratings (Ta=25°C) sElectrical Characteristics
(Ta=25°C)
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SB1570
–160
–150
–5
–12
–1
150(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
Conditions
VCB=–160V
VEB=–5V
IC=–30mA
VCE=–4V, IC=–7A
IC=–7A, IB=–7mA
IC=–7A, IB=–7mA
VCE=–12V, IE=2A
VCB=–10V, f=1MHz
2SB1570
–100max
–100max
–150min
5000min
–2.5max
–3.0max
50typ
230typ
Unit
µA
µA
V
V
V
MHz
pF
hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
IB2
ton tstg
tf
(V)
() (A)
(V)
(V)
(mA)
(mA)
(µs)
(µs) (µs)
–70 10 –7 –10 5 –7 7 0.8typ 3.0typ 1.2typ
External Dimensions MT-200
2-ø3.2±0.1
36.4±0.3
24.4±0.2
6.0±0.2
2.1
9
a
b
2
3
1.05
+0.2
-0.1
0.65
+0.2
-0.1
5.45±0.1
5.45±0.1
3.0
+0.3
-0.1
BCE
Weight : Approx 18.4g
a. Type No.
b. Lot No.
I C– V CE Characteristics (Typical)
–12
–10mA
–10
–8
–6
–4
–2.0mA
–2.0mA
–1.5mA
–1.2mA
–1.0mA
–0.8mA
–0.6mA
IB=–0.4mA
–2
0
0 –2 –4 –6
Collector-Emitter Voltage VCE(V)
V CE( s a t ) – I B Characteristics (Typical)
–3
–2
–10A
–7A
IC=–5A
–1
0
–0.2 –0.5 –1
–5 –10
Base Current IB(mA)
–50 –100 –200
I C– V BE Temperature Characteristics (Typical)
(VCE=–4V)
–12
–10
–8
–6
–4
–2
0
0 –1 –2 –2.5
Base-Emittor Voltage VBE(V)
h FE– I C Characteristics (Typical)
40,000
(VCE=–4V)
10,000
5,000
Typ
h FE– I C Temperature Characteristics (Typical)
50000
125˚C
(VCE=–4V)
10000
5000
25˚C
–30˚C
θ j-a– t Characteristics
2
1
0.5
0.1
1,000
–0.2
–0.5
–1
Collector Current IC(A)
–5
–10–12
1000
800
–0.2
–0.5
–1
–5
Collector Current IC(A)
–10 –12
1
5 10
50 100
Time t(ms)
500 1000 2000
f T– I E Characteristics (Typical)
(VCE=–12V)
100
80
60 Typ
40
20
0
0.02 0.05 0.1
0.5 1
Emitter Current IE(A)
48
5 10
Safe Operating Area (Single Pulse)
–30
–10
–5
100ms 10ms
DC
–1
–0.5
–0.1
Without Heatsink
Natural Cooling
–0.05
–3
–5 –10
–50 –100 –200
Collector-Emitter Voltage VCE(V)
Pc–Ta Derating
160
120
80
40
Without Heatsink
5
0
0 25 50
75
100 125
Ambient Temperature Ta(˚C)
150

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