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2SB1567 fiches techniques PDF

ROHM Semiconductor - Power Transistor ( 100V /2A)

Numéro de référence 2SB1567
Description Power Transistor ( 100V /2A)
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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2SB1567 fiche technique
Transistors
2SB1580 / 2SB1316 / 2SB1567
Power Transistor (100V , 2A)
2SB1580 / 2SB1316 / 2SB1567
!Features
1) Darlington connection for high DC current gain.
2) Built-in resistor between base and emitter.
3) Built-in damper diode.
4) Complements the 2SD2195 / 2SD1980 / 2SD2398.
!Absolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector
power
dissipation
2SB1580
2SB1316
2SB1567
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
100
100
8
2
3
2
1
10
2
20
150
55∼+150
1 Single pulse Pw=100ms
2 When mounted on a 40 x 40 x 0.7 mm ceramic board.
Unit
V
V
V
A(DC)
A(Pulse)
1
W 2
W(Tc=25°C)
W
W(Tc=25°C)
°C
°C
!Packaging specifications and hFE
Type
Package
hFE
Marking
Code
Basic ordering unit (pieces)
Denotes hFE
2SB1580
MPT3
1k 10k
BN
T100
1000
2SB1316
CPT3
1k 10k
TL
2500
2SB1567
TO-220FN
1k 10k
500
!Circuit schematic
C
B
R1 R2
E
R1 3.5k
R2 300
B : Base
C : Collector
E : Emitter
!External dimensions (Units : mm)
2SB1580
ROHM : MPT3
EIAJ : SC-62
4.0
1.0 2.5 0.5
(1)
(2)
(3)
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
2SB1316
5.5 1.5
0.9
ROHM : CPT3
EIAJ : SC-63
0.8Min.
1.5
2.5
9.5
C0.5
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
2SB1567
10.0
φ 3.2
4.5
2.8
1.2 1.3
0.8
2.54 2.54
(1) (2) (3)
(1) (2) (3)
ROHM : TO-220FN
0.75 2.6
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
!Electrical characteristics (Ta = 25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Output capacitance
Measured using pulse current.
Symbol
BVCBO
BVCEO
ICBO
IEBO
VCE(sat)
hFE
Cob
Min.
100
100
1000
Typ.
35
Max.
10
3
1.5
10000
Unit
V
V
µA
mA
V
pF
Conditions
IC = −50µA
IC = −5mA
VCB = −100V
VEB = −7V
IC/IB = −1A/1mA
VCE = −2V , IC = −1A
VCB = −10V , IE = 0A , f = 1MHz
*
*

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