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IPB47N10SL-26 fiches techniques PDF

Infineon Technologies - SIPMOS Power-Transistor

Numéro de référence IPB47N10SL-26
Description SIPMOS Power-Transistor
Fabricant Infineon Technologies 
Logo Infineon Technologies 





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IPB47N10SL-26 fiche technique
www.DataSheet.co.kr
SIPMOS=Power-Transistor
Feature
 N-Channel
 Enhancement mode
 Logic Level
175°C operating temperature
P-TO262-3-1
 Avalanche rated
 dv/dt rated
• Green package (lead free)
IPI47N10SL-26
IPP47N10SL-26, IPB47N10SL-26
Product Summary
VDS 100 V
RDS(on) 26 m
ID 47 A
P-TO263-3-2
P-TO220-3-1
Type
IPP47N10SL-26
IPB47N10SL-26
IPI47N10SL-26
Package
Ordering Code
PG-TO220-3-1 SP0002-25707
PG-TO263-3-2 SP0002-25701
PG-TO262-3-1 SP0002-25704
Marking
N10L26
N10L26
N10L26
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
TC=25°C
TC=100°C
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
ID=47 A , VDD=25V, RGS=25
Avalanche energy, periodic limited by Tjmax
Reverse diode dv/dt
ID
ID puls
EAS
EAR
dv/dt
IS=47A, VDS=0V, di/dt=200A/µs
Gate source voltage
VGS
Power dissipation
TC=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Ptot
Tj , Tstg
Page 1
Value
47
33
188
Unit
A
400 mJ
17.5
6 kV/µs
±20 V
175 W
-55... +175
55/175/56
°C
2006-02-14
Datasheet pdf - http://www.DataSheet4U.net/

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