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PDF 2SB1474 Data sheet ( Hoja de datos )
| Número de pieza | 2SB1474 | |
| Descripción | Power Transistor (-80V/ -4A) | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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Transistor
Power Transistor (−80V, −4A)
2SB1474
2SB1474
!Features
1) Darlington connection for a high hFE.
2) Built-in resistor between base and emitter.
3) Built-in damper doide.
!Absolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
* Single pulse, Pw=100ms
Symbol
VCBO
VCES
VEBO
IC
PC
Tj
Tstg
Limits
-80
-80
-7
-4
-6
1
10
150
-55~+150
Unit
V
V
V
A(DC)
A
*
W
W (Tc=25˚C)
˚C
˚C
!External dimensions (Units : mm)
5.5 1.5
0.9
ROHM : CPT3
EIAJ : SC-63
0.8Min.
1.5
2.5
9.5
C0.5
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
!Packaging specifications and hFE
Type
Package
hFE
Code
Basic ordering unit (pieces)
2SB1474
CPT3
1k~10k
TL
2500
!Circuit diagram
C
B
R1 R2
E
R1 3kΩ
R2 300Ω
B : Base
C : Collector
E : Emitter
!Electrical characteristics (Ta=25°C)
Parameter
Symbol
Min. Typ.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
BVCBO
BVCEO
-80
-80
-
-
Collector cutoff current
ICBO
--
Emitter cutoff current
IEBO
--
Collector-emitter saturation voltage
VCE(sat)
-
-1
DC current transfer ratio
hFE 1000 5000
Transition frequency
fT - 12
Output capacitance
Cob
- 45
* *1 Measured using pulse current. 2 Transition frequency of the device.
Max.
-
-
-100
-3
-1.5
10000
-
-
Unit
V
V
µA
mA
V
-
MHz
pF
Conditions
IC=-50µA
IC=-1mA
VCB=-80V
VEB=-5V
IC/IB=-2A/-4mA
VCE/IC=-3V/-2A
VCE=-5V, IE=0.5A, f=10MHz
VCB=-10V, IE=0A, f=1MHz
*1
*1
*2
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 2SB1474.PDF ] | |
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