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Número de pieza | IRFHS8342PBF | |
Descripción | HEXFET Power MOSFET | |
Fabricantes | International Rectifier | |
Logotipo | ||
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No Preview Available ! VDS
VGS max
RDS(on) max
(@VGS = 10V)
Qg(typical)
(@VGS = 4.5V)
ID
(@Tc(Bottom) = 25°C)
30
±20
16.0
4.2
d8.5
V
V
mΩ
nC
A
Applications
• Control MOSFET for Buck Converters
• System/Load Switch
Features and Benefits
Features
Low RDSon (≤ 16.0mΩ)
Low Thermal Resistance to PCB (≤ 13°C/W)
Low Profile (≤ 1.0 mm)
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
IRFHS8342PbF
T OP VIEW
HEXFET® Power MOSFET
D1
D2
G3
6D
D 5D
S 4S
D
D
DG
D
D
S
S
2mm x 2mm PQFN
results in
Resulting Benefits
Lower Conduction Losses
Enable better thermal dissipation
Increased Power Density
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
IRFHS8342TRPbF
IRFHS8342TR2PbF
Package Type
PQFN 2mm x 2mm
PQFN 2mm x 2mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
EOL notice # 259
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom)= 70°C
ID @ TC(Bottom) = 25°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
fPower Dissipation
fPower Dissipation
fLinear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Max.
30
±20
d8.8
7.1
19d
15d
d8.5
76
2.1
1.3
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
Notes through
are on page 2
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December 17, 2013
1 page 35
ID = 8.5A
30
25
20
TJ = 125°C
15
10 TJ = 25°C
5
0 5 10 15 20
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
600
IRFHS8342PbF
30
Vgs = 4.5V
25
20
15
Vgs = 10V
10
5
0 10 20 30 40 50 60 70
ID, Drain Current (A)
Fig 13. Typical On-Resistance vs. Drain Current
500
400
300
200
100
0
1E-5
1E-4
1E-3 1E-2
Time (sec)
1E-1
1E+0
Fig 14. Typical Power vs. Time
+
-
RG
D.U.T
+
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
Circuit Layout Considerations
• Low Stray Inductance
-
• Ground Plane
• Low Leakage Inductance
Current Transformer
- +
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
• dv/dt controlled by RG
• Driver same type as D.U.T.
VDD +
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
-
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple ≤ 5%
*VGS=10V
VDD
ISD
* VGS = 5V for Logic Level Devices
Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
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December 17, 2013
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet IRFHS8342PBF.PDF ] |
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IRFHS8342PBF | HEXFET Power MOSFET | International Rectifier |
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