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PDF 2SB1463 Data sheet ( Hoja de datos )
| Número de pieza | 2SB1463 | |
| Descripción | Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification) | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Transistor
2SB1463
Silicon PNP epitaxial planer type
For high breakdown voltage low-noise amplification
Complementary to 2SD2240
s Features
q High collector to emitter voltage VCEO.
q Low noise voltage NV.
q SS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–150
–150
–5
–100
–50
125
125
–55 ~ +125
Unit
V
V
V
mA
mA
mW
˚C
˚C
Unit: mm
1.6±0.15
0.4 0.8±0.1 0.4
1
3
2
0.2±0.1
1:Base
2:Emitter
3:Collector
EIAJ:SC–75
SS–Mini Type Package
Marking symbol : I
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
ICBO
VCEO
VEBO
hFE*
VCE(sat)
fT
VCB = –100V, IE = 0
IC = –100µA, IB = 0
IE = –10µA, IC = 0
VCE = –5V, IC = –10mA
IC = –30mA, IB = –3mA
VCB = –10V, IE = 10mA, f = 200MHz
–150
–5
130
200
–1 µA
V
V
450
–1 V
MHz
Collector output capacitance
Noise voltage
Cob
NV
VCB = –10V, IE = 0, f = 1MHz
VCE = –10V, IC = –1mA, GV = 80dB,
Rg = 100kΩ, Function = FLAT
4
150
pF
mV
*hFE Rank classification
Rank
hFE
Marking Symbol
R
130 ~ 220
IR
S
185 ~ 330
IS
T
260 ~ 450
IT
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SB1463.PDF ] | |
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