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Número de pieza | 2SB1435 | |
Descripción | Silicon PNP Epitaxial Transistor | |
Fabricantes | Panasonic Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SB1435 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! Power Transistors
2SB1435
Silicon PNP epitaxial planar type
For low-frequency output amplification
■ Features
• Low collector-emitter saturation voltage VCE(sat)
• Large collector current IC
• Allowing automatic insertion with radial taping
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
−50
−50
−5
−2
−3
1.5
150
−55 to +150
Unit
V
V
V
A
A
W
°C
°C
7.5±0.2
Unit: mm
4.5±0.2
0.65±0.1
0.7±0.1
1.15±0.2
0.85±0.1
1.0±0.1 0.8 C
0.7±0.1
1.15±0.2
0.8 C
0.5±0.1
0.4±0.1
0.8 C 1 2 3
2.5±0.2
2.5±0.2
1: Emitter
2: Collector
3: Base
MT-3-A1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emiter open) VCBO IC = −10 µA, IE = 0
−50
Collector-emitter voltage (Base open) VCEO IC = −1 mA, IB = 0
−50
Emiter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0
−5
Collector-base cutoff current (Emitter open) ICBO VCB = −20 V, IE = 0
− 0.1
Forward current transfer ratio
hFE1 * VCE = −2 V, IC = −200 mA
120 340
hFE2 VCE = −2 V, IC = −1 A
60
Collector-emitter saturation voltage
VCE(sat) IC = −1 A, IB = −50 mA
− 0.2 − 0.3
Base-emitter saturation voltage
VBE(sat) IC = −1 A, IB = −50 mA
− 0.85 −1.20
Transition frequency
fT VCB = −10 V, IE = 50 mA, f = 200 MHz
80
Collector output capacitance
(Common base, input open circuited)
Cob VCB = −10 V, IE = 0, f = 1 MHz
45 60
V
V
V
µA
V
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
hFE1
R
120 to 240
S
170 to 340
Publication date: March 2003
SJD00074BED
1
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet 2SB1435.PDF ] |
Número de pieza | Descripción | Fabricantes |
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2SB1434 | Silicon PNP epitaxial planer type(For low-frequency output amplification) | Panasonic Semiconductor |
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