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PDF 2SB1435 Data sheet ( Hoja de datos )

Número de pieza 2SB1435
Descripción Silicon PNP Epitaxial Transistor
Fabricantes Panasonic Semiconductor 
Logotipo Panasonic Semiconductor Logotipo



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Power Transistors
2SB1435
Silicon PNP epitaxial planar type
For low-frequency output amplification
Features
Low collector-emitter saturation voltage VCE(sat)
Large collector current IC
Allowing automatic insertion with radial taping
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
50
50
5
2
3
1.5
150
55 to +150
Unit
V
V
V
A
A
W
°C
°C
7.5±0.2
Unit: mm
4.5±0.2
0.65±0.1
0.7±0.1
1.15±0.2
0.85±0.1
1.0±0.1 0.8 C
0.7±0.1
1.15±0.2
0.8 C
0.5±0.1
0.4±0.1
0.8 C 1 2 3
2.5±0.2
2.5±0.2
1: Emitter
2: Collector
3: Base
MT-3-A1 Package
Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emiter open) VCBO IC = −10 µA, IE = 0
50
Collector-emitter voltage (Base open) VCEO IC = −1 mA, IB = 0
50
Emiter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0
5
Collector-base cutoff current (Emitter open) ICBO VCB = −20 V, IE = 0
0.1
Forward current transfer ratio
hFE1 * VCE = −2 V, IC = −200 mA
120 340
hFE2 VCE = −2 V, IC = −1 A
60
Collector-emitter saturation voltage
VCE(sat) IC = −1 A, IB = −50 mA
0.2 0.3
Base-emitter saturation voltage
VBE(sat) IC = −1 A, IB = −50 mA
0.85 1.20
Transition frequency
fT VCB = −10 V, IE = 50 mA, f = 200 MHz
80
Collector output capacitance
(Common base, input open circuited)
Cob VCB = −10 V, IE = 0, f = 1 MHz
45 60
V
V
V
µA
V
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
hFE1
R
120 to 240
S
170 to 340
Publication date: March 2003
SJD00074BED
1

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