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PDF 6673BZ Data sheet ( Hoja de datos )
| Número de pieza | 6673BZ | |
| Descripción | FDS6673BZ | |
| Fabricantes | Fairchild Semiconductor | |
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www.DataSheet.co.kr
January 2006
FDS6673BZ
P-Channel PowerTrench® MOSFET
-30V, -14.5A, 7.8mΩ
General Description
This P-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench process that
has been especially tailored to minimize the on-state
resistance.
This device is well suited for Power Management and
load switching applications common in Notebook
Computers and Portable Battery Packs.
Features
Max rDS(on) = 7.8mΩ, VGS = -10V, ID = -14.5A
Max rDS(on) = 12mΩ, VGS = -4.5V, ID = -12A
Extended VGS range (-25V) for battery applications
HBM ESD protection level of 6.5kV typical (note 3)
High performance trench technology for extremely low
rDS(on)
High power and current handling capability
RoHS compliant
DD
D
D
SO-8
S SSG
5
6
7
8
4
3
2
1
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDS Drain to Source Voltage
VGS Gate to Source Voltage
ID
Drain Current -Continuous
-Pulsed
(Note1a)
Power Dissipation for Single Operation
(Note1a)
PD (Note1b)
(Note1c)
TJ, TSTG
Operating and Storage Temperature
Ratings
-30
±25
-14.5
-75
2.5
1.2
1.0
-55 to 150
Units
V
V
A
A
W
°C
Thermal Characteristics
RθJA
RθJC
Thermal Resistance , Junction to Ambient (Note 1a)
Thermal Resistance , Junction to Case (Note 1)
50 °C/W
25 °C/W
Package Marking and Ordering Information
Device Marking
FDS6673BZ
Device
FDS6673BZ
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
©2006 Fairchild Semiconductor Corporation
FDS6673BZ Rev. B
1
www.fairchildsemi.com
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
www.DataSheet.co.kr
Typical Characteristics TJ = 25°C unless otherwise noted
1000
100
10
1
10-5
VGS = -10V
TA = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25
-1---5---0-1---2-–--5---T---A---
SINGLE PULSE
10-4
10-3
10-2
10-1
100
101
t, PULSE WIDTH (s)
Figure 13. Single Pulse Maximum Power Dissipation
102
103
2
1 DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
SINGLE PULSE
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
1E-3
10-5
10-4
10-3
10-2
10-1
100
101
102
t, RECTANGULAR PULSE DURATION(s)
Figure 14. Transient Thermal Response Curve
103
FDS6673BZ Rev. B
5 www.fairchildsemi.com
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
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