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PDF 2SB1427 Data sheet ( Hoja de datos )
| Número de pieza | 2SB1427 | |
| Descripción | Power transistor ( 20V/2A) | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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Transistors
Power transistor (−20V, −2A)
2SB1427
2SB1427
!Features
1) Low saturation voltage,
typically VCE(sat) = −0.5V at IC/IB = −1A / −50mA.
2) Excellent DC current gain characteristics.
!External dimensions (Units : mm)
ROHM : MPT3
EIAJ : SC-62
4.0
1.0 2.5 0.5
(1)
(2)
(3)
(1) Base
(2) Collector
(3) Emitter
!Absolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Collector power dissipation
PC
Junction temperature
Tj
Storage temperature
Tstg
∗1 Single pulse, Pw=10ms
∗2 When mounted on a 40×40×0.7mm ceramic board.
Limits
−20
−20
−6
−2
−3
0.5
2
150
−55 ~ +150
Unit
V
V
V
A(DC)
A(Pulse) ∗1
W ∗2
°C
°C
!Packaging specifications and hFE
Type
Package
hFE
Marking
Code
Basic ordering unit (pieces)
∗ Denotes hFE
2SB1427
MPT3
E
BJ ∗
T100
1000
!Electrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
∗ Measured using pulse current.
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
−20
−20
−6
−
−
−
390
−
−
Typ.
−
−
−
−
−
−
−
90
30
Max.
−
−
−
−0.5
−0.5
−0.5
820
−
−
Unit
V
V
V
µA
µA
V
−
MHz
pF
Conditions
IC = −50µA
IC = −1mA
IE = −50µA
VCB = −16V
VEB = −5V
IC/IB = −1A/−500mA
VCE/IC = −6V/−0.5A
VCE = −10V , IE = 10mA , f= 30MHz
VCB = −10V , IE = 0A , f = 1MHz
∗
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SB1427.PDF ] | |
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