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PDF 74AVC4T245 Data sheet ( Hoja de datos )

Número de pieza 74AVC4T245
Descripción 4-bit dual supply translating transceiver
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74AVC4T245
4-bit dual supply translating transceiver with configurable
voltage translation; 3-state
Rev. 01 — 20 July 2009
Product data sheet
1. General description
The 74AVC4T245 is an 4-bit, dual supply transceiver that enables bidirectional level
translation. The device can be used as two 2-bit transceivers or as a 4-bit transceiver. It
features two data input-output ports (nAn and nBn), a direction control input (nDIR), a
output enable input (nOE) and dual supply pins (VCC(A) and VCC(B)). Both VCC(A) and
VCC(B) can be supplied at any voltage between 0.8 V and 3.6 V making the device suitable
for translating between any of the low voltage nodes (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V and
3.3 V). Pins nAn, nOE and nDIR are referenced to VCC(A) and pins nBn are referenced to
VCC(B). A HIGH on nDIR allows transmission from nAn to nBn and a LOW on nDIR allows
transmission from nBn to nAn. The output enable input (nOE) can be used to disable the
outputs so the buses are effectively isolated.
The device is fully specified for partial power-down applications using IOFF. The IOFF
circuitry disables the output, preventing any damaging backflow current through the
device when it is powered down. In suspend mode when either VCC(A) or VCC(B) are at
GND level, both nAn and nBn are in the high-impedance OFF-state.
2. Features
I Wide supply voltage range:
N VCC(A): 0.8 V to 3.6 V
N VCC(B): 0.8 V to 3.6 V
I Complies with JEDEC standards:
N JESD8-12 (0.8 V to 1.3 V)
N JESD8-11 (0.9 V to 1.65 V)
N JESD8-7 (1.2 V to 1.95 V)
N JESD8-5 (1.8 V to 2.7 V)
N JESD8-B (2.7 V to 3.6 V)
I ESD protection:
N HBM JESD22-A114E Class 3B exceeds 8000 V
N MM JESD22-A115-A exceeds 200 V
N CDM JESD22-C101C exceeds 1000 V
I Maximum data rates:
N 380 Mbit/s (1.8 V to 3.3 V translation)
N 200 Mbit/s (1.1 V to 3.3 V translation)
N 200 Mbit/s (1.1 V to 2.5 V translation)
N 200 Mbit/s (1.1 V to 1.8 V translation)
N 150 Mbit/s (1.1 V to 1.5 V translation)
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74AVC4T245 pdf
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NXP Semiconductors
74AVC4T245
4-bit dual supply translating transceiver; 3-state
6. Functional description
Table 3. Function table[1]
Supply voltage
Input
VCC(A), VCC(B)
0.8 V to 3.6 V
nOE[2]
L
0.8 V to 3.6 V
L
0.8 V to 3.6 V
H
GND[3]
X
nDIR[2]
L
H
X
X
Input/output[3]
nAn[2]
nAn = nBn
input
Z
Z
nBn[2]
input
nBn = nAn
Z
Z
[1] H = HIGH voltage level; L = LOW voltage level; X = don’t care; Z = high-impedance OFF-state.
[2] The nAn, nDIR and nOE input circuit is referenced to VCC(A); The nBn input circuit is referenced to VCC(B).
[3] If at least one of VCC(A) or VCC(B) is at GND level, the device goes into suspend mode.
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
Min Max Unit
VCC(A)
VCC(B)
IIK
VI
IOK
VO
supply voltage A
supply voltage B
input clamping current
input voltage
output clamping current
output voltage
VI < 0 V
VO < 0 V
Active mode
Suspend or 3-state mode
0.5
0.5
50
[1] 0.5
50
[1][2][3] 0.5
[1] 0.5
+4.6
+4.6
-
+4.6
-
VCCO + 0.5
+4.6
V
V
mA
V
mA
V
V
IO output current
VO = 0 V to VCCO
[2] -
±50 mA
ICC
IGND
Tstg
Ptot
supply current
ground current
storage temperature
total power dissipation
ICC(A) or ICC(B)
Tamb = 40 °C to +125 °C
-
100
65
[4] -
100
-
+150
500
mA
mA
°C
mW
[1] The minimum input voltage ratings and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2] VCCO is the supply voltage associated with the output port.
[3] VCCO + 0.5 V should not exceed 4.6 V.
[4] For SO16 package: above 70 °C derates linearly with 8 mW/K.
For TSSOP16 package: above 60 °C the value of Ptot derates linearly at 5.5 mW/K.
For DHVQFN16 package: above 60 °C the value of Ptot derates linearly at 4.5 mW/K.
74AVC4T245_1
Product data sheet
Rev. 01 — 20 July 2009
© NXP B.V. 2009. All rights reserved.
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74AVC4T245 arduino
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NXP Semiconductors
74AVC4T245
4-bit dual supply translating transceiver; 3-state
Table 10. Typical dynamic characteristics at VCC(A) = 0.8 V and Tamb = 25 °C [1]
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 8; for wave forms see Figure 6 and Figure 7
Symbol Parameter
Conditions
VCC(B)
Unit
0.8 V 1.2 V 1.5 V 1.8 V 2.5 V 3.3 V
tpd propagation delay nAn to nBn
14.5 7.3 6.5 6.2 5.9 6.0 ns
nBn to nAn
14.5 12.7 12.4 12.3 12.1 12.0 ns
tdis disable time
nOE to nAn
14.3 14.3 14.3 14.3 14.3 14.3 ns
nOE to nBn
17.0 9.9 9.0 9.4 9.0 9.7 ns
ten enable time
nOE to nAn
nOE to nBn
18.2 18.2 18.2 18.2 18.2 18.2 ns
19.2 10.7
9.8
9.6
9.7 10.2 ns
[1] tpd is the same as tPLH and tPHL; tdis is the same as tPLZ and tPHZ; ten is the same as tPZL and tPZH.
Table 11. Typical dynamic characteristics at VCC(B) = 0.8 V and Tamb = 25 °C [1]
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 8; for wave forms see Figure 6 and Figure 7
Symbol Parameter
Conditions
0.8 V
1.2 V
VCC(A)
1.5 V 1.8 V
2.5 V
Unit
3.3 V
tpd propagation delay nAn to nBn
nBn to nAn
14.5 12.7 12.4 12.3 12.1 12.0 ns
14.5 7.3 6.5 6.2 5.9 6.0 ns
tdis disable time
nOE to nAn
nOE to nBn
14.3 5.5 4.1 4.0 3.0 3.5 ns
17.0 13.8 13.4 13.1 12.9 12.7 ns
ten enable time
nOE to nAn
nOE to nBn
18.2 5.6 4.0 3.2 2.4 2.2 ns
19.2 14.6 14.1 13.9 13.7 13.6 ns
[1] tpd is the same as tPLH and tPHL; tdis is the same as tPLZ and tPHZ; ten is the same as tPZL and tPZH.
74AVC4T245_1
Product data sheet
Rev. 01 — 20 July 2009
© NXP B.V. 2009. All rights reserved.
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