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FUMG9N fiches techniques PDF

Jiangsu Changjiang Electronics - TRANSISTOR

Numéro de référence FUMG9N
Description TRANSISTOR
Fabricant Jiangsu Changjiang Electronics 
Logo Jiangsu Changjiang Electronics 





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FUMG9N fiche technique
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-05C Digital transistors (built-in resistors)
FUMG9N TRANSISTOR
DESCRIPTION
Epitaxial planar type NPN silicon transistor
(Built-in resistor type)
FEATURES
z Two DTC114E in a package.
z Mounting cost and area can be cut in half.
APPLICATION
Dual Digital Transistors for Inverter Drive
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
Equivalent circuit
WBFBP-05C
(2×2×0.5)
unit: mm
MARKING:G9
1
G9
Absolute maximum ratings(Ta=25)
Parameter
Symbol
Supply voltage
VCC
Input voltage
VIN
Output current
IO
IC(MAX)
Power dissipation
Pd
Junction temperature
Tj
Storage temperature
Tstg
Electrical characteristics (Ta=25)
Limits
50
-10~40
50
100
150
150
-55~150
Unit
V
V
mA
mW
Parameter
Symbol Min.
Typ
Max.
Unit
Conditions
Input voltage
VI(off)
VI(on)
3
0.5
V
VCC=5V ,IO=100µA
VO=0.3V ,IO=10 mA
Output voltage
VO(on)
0.3 V
IO/II=10mA/0.5mA
Input current
II
0.88 mA
VI=5V
Output current
IO(off)
0.5 µA
VCC=50V, VI=0
DC current gain
GI 30
VO=5V ,IO=5mA
Input resistance
R1 7 10 13 K
Resistance ratio
R2/R1
0.8
1
1.2
Transition frequency
fT
250
MHz
VCE=10V ,IE=-5mA,f=100MHz
Datasheet pdf - http://www.DataSheet4U.net/

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