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PDF 2SB1320A Data sheet ( Hoja de datos )
| Número de pieza | 2SB1320A | |
| Descripción | Silicon PNP Epitaxial Transistor | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Transistors
2SB1320A
Silicon PNP epitaxial planer type
For general amplification
Complementary to 2SD1991A
6.9±0.1
0.7 4.0
Unit: mm
1.05 2.5±0.1
±0.05
(1.45)
0.8
I Features
• High forward current transfer ratio hFE
• Allowing supply with the radial taping
0.65 max.
I Absolute Maximum Ratings Ta = 25°C
0.45+−00..105
2.5±0.5 2.5±0.5
123
Parameter
Symbol Rating
Unit
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
−60
−50
−7
−200
−100
400
150
−55 to +150
V
V
V
mA
mA
mW
°C
°C
Note) In addition to the
lead type shown in
the upper figure,
the type as shown
in the lower figure
is also available.
1: Emitter
2: Collector
3: Base
MT1 Type Package
1.2±0.1
0.45+−00..105
0.65
max.
(HW Type)
I Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector cutoff current
ICBO VCB = −20 V, IE = 0
−1 µA
ICEO VCE = −20 V, IB = 0
−1 µA
Collector to base voltage
VCBO
IC = −10 µA, IE = 0
−60
V
Collector to emitter voltage
VCEO
IC = −2 mA, IB = 0
−50
V
Emitter to base voltage
VEBO
IE = −10 µA, IC = 0
−7
V
Forward current transfer ratio *
hFE VCE = −10 V, IC = −2 mA
160 460
Collector to emitter saturation voltage VCE(sat) IC = −100 mA, IB = −10 mA
−1 V
Transition frequency
fT VCB = −10 V, IE = 1 mA, f = 200 MHz
80
MHz
Collector output capacitance
Cob VCB = −10 V, IE = 0, f = 1 MHz
3.5 pF
Note) *: Rank classification
Rank
Q
R
S No-rank
hFE 160 to 260 210 to 340 290 to 460 160 to 460
Product of no-rank is not classified and have no indication for rank.
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SB1320A.PDF ] | |
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