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PDF 2SB1319 Data sheet ( Hoja de datos )
| Número de pieza | 2SB1319 | |
| Descripción | Silicon PNP epitaxial planer type(For low-frequency power amplification) | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SB1319 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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Transistor
2SB1319
Silicon PNP epitaxial planer type
For low-frequency power amplification
Unit: mm
s Features
q Low collector to emitter saturation voltage VCE(sat).
q Large collector current IC.
q M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
–30
V
Collector to emitter voltage VCEO
–20
V
Emitter to base voltage
VEBO
–7
V
Peak collector current
ICP
–8 A
Collector current
IC
–5 A
Collector power dissipation PC* 1 W
Junction temperature
Tj
150 ˚C
Storage temperature
Tstg –55 ~ +150 ˚C
* Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
6.9±0.1
1.5
1.5 R0.9
R0.9
2.5±0.1
1.0
0.85
0.55±0.1
321
0.45±0.05
2.5 2.5
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
ICBO
IEBO
VCEO
VEBO
hFE*1
VCE(sat)
fT
Cob
Conditions
VCB = –10V, IE = 0
VEB = –5V, IC = 0
IC = –1mA, IB = 0
IE = –10µA, IC = 0
VCE = –2V, IC = –2A*2
IC = –3A, IB = –0.1A*2
VCB = –6V, IE = 50mA, f = 200MHz
VCB = –20V, IE = 0, f = 1MHz
min
–20
–7
90
*1hFE Rank classification
Rank
P
Q
hFE 90 ~ 135 120 ~ 205
R
180 ~ 625
typ max Unit
–100 nA
–1 µA
V
V
625
–1 V
120 MHz
85 pF
*2 Pulse measurement
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SB1319.PDF ] | |
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