|
|
Número de pieza | 2SB1316 | |
Descripción | Power Transistor | |
Fabricantes | ROHM Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SB1316 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! Transistors
Power Transistor (−100V , −2A)
2SB1316
2SB1316
zFeatures
1) Darlington connection for high DC current gain.
2) Built-in resistor between base and emitter.
3) Built-in damper diode.
4) Complements the 2SD2195 / 2SD1980.
zAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Limits
Collector-base voltage
Collector-emitter voltage
VCBO
VCEO
−100
−100
Emitter-base voltage
Collector current
Collector 2SB1580
power
dissipation 2SB1316
VEBO
IC
PC
−8
−2
−3
2
1
10
Junction temperature
Tj 150
Storage temperature
Tstg
−55 to +150
∗1 Single pulse Pw=100ms
∗2 When mounted on a 40 x 40 x 0.7 mm ceramic board.
Unit
V
V
V
A(DC)
A(Pulse)
∗1
W ∗2
W(Tc=25°C)
°C
°C
zPackaging specifications and hFE
Type
Package
hFE
Marking
Code
Basic ordering unit (pieces)
∗ Denotes hFE
2SB1580
MPT3
1k to 10k
BN∗
T100
1000
2SB1316
CPT3
1k to 10k
−
TL
2500
zEquivalent circuit
C
B
R1 R2
E
R1 3.5kΩ
R2 300Ω
B : Base
C : Collector
E : Emitter
zExternal dimensions (Unit : mm)
2SB1580
4.0
1.0 2.5 0.5
(1)
(2)
(3)
ROHM : MPT3
EIAJ : SC-62
(1) Base
(2) Collector
(3) Emitter
2SB1316
5.5 1.5
0.9
0.8Min.
ROHM : CPT3
EIAJ : SC-63
TO-252(DPAK)
1.5
2.5
9.5
C0.5
(1) Base
(2) Collector
(3) Emitter
zElectrical characteristics (Ta = 25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
∗ Measured using pulse current.
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
−100
−100
−10
−
−
−
1000
−
−
Typ.
−
−
−
−
−
−
−
50
35
Max.
−
−
−
−10
−3
−1.5
10000
−
−
Unit
V
V
V
µA
mA
V
−
MHz
pF
Conditions
IC = −50µA
IC = −5mA
IE = −5mA
VCB = −100V
VEB = −7V
IC/IB= −1A/−1mA
VCE = −2V , IC = −1A
VCE = −5V , IE =0.1A , f = 30MHz
VCB = −10V , IE = 0A , f = 1MHz
∗
∗
Rev.A
1/2
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet 2SB1316.PDF ] |
Número de pieza | Descripción | Fabricantes |
2SB1314 | FOR LOW FREQUENCY POWER AMPLIFY APPLICATION | ETC |
2SB1315 | SILICON POWER TRANSISTOR | SavantIC |
2SB1316 | Power Transistor | ROHM Semiconductor |
2SB1316 | Silicon PNP Power Transistor | Inchange Semiconductor |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |