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PDF 2SB1316 Data sheet ( Hoja de datos )

Número de pieza 2SB1316
Descripción Power Transistor
Fabricantes ROHM Semiconductor 
Logotipo ROHM Semiconductor Logotipo



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Transistors
Power Transistor (100V , 2A)
2SB1316
2SB1316
zFeatures
1) Darlington connection for high DC current gain.
2) Built-in resistor between base and emitter.
3) Built-in damper diode.
4) Complements the 2SD2195 / 2SD1980.
zAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Limits
Collector-base voltage
Collector-emitter voltage
VCBO
VCEO
100
100
Emitter-base voltage
Collector current
Collector 2SB1580
power
dissipation 2SB1316
VEBO
IC
PC
8
2
3
2
1
10
Junction temperature
Tj 150
Storage temperature
Tstg
55 to +150
1 Single pulse Pw=100ms
2 When mounted on a 40 x 40 x 0.7 mm ceramic board.
Unit
V
V
V
A(DC)
A(Pulse)
1
W 2
W(Tc=25°C)
°C
°C
zPackaging specifications and hFE
Type
Package
hFE
Marking
Code
Basic ordering unit (pieces)
Denotes hFE
2SB1580
MPT3
1k to 10k
BN
T100
1000
2SB1316
CPT3
1k to 10k
TL
2500
zEquivalent circuit
C
B
R1 R2
E
R1 3.5k
R2 300
B : Base
C : Collector
E : Emitter
zExternal dimensions (Unit : mm)
2SB1580
4.0
1.0 2.5 0.5
(1)
(2)
(3)
ROHM : MPT3
EIAJ : SC-62
(1) Base
(2) Collector
(3) Emitter
2SB1316
5.5 1.5
0.9
0.8Min.
ROHM : CPT3
EIAJ : SC-63
TO-252(DPAK)
1.5
2.5
9.5
C0.5
(1) Base
(2) Collector
(3) Emitter
zElectrical characteristics (Ta = 25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Measured using pulse current.
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
100
100
10
1000
Typ.
50
35
Max.
10
3
1.5
10000
Unit
V
V
V
µA
mA
V
MHz
pF
Conditions
IC = −50µA
IC = −5mA
IE = −5mA
VCB = −100V
VEB = −7V
IC/IB= −1A/1mA
VCE = −2V , IC = −1A
VCE = −5V , IE =0.1A , f = 30MHz
VCB = −10V , IE = 0A , f = 1MHz
Rev.A
1/2

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