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PDF NP062A1 Data sheet ( Hoja de datos )
| Número de pieza | NP062A1 | |
| Descripción | Silicon NPN epitaxial planar type | |
| Fabricantes | Panasonic Semiconductor | |
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Composite Transistors
NP062A1
Silicon NPN epitaxial planar type
For digital circuits
■ Features
• Two elements incorporated into one package
• Suitable for high-density mounting and downsizing of the equipment
• Contribute to low power consumption
■ Basic Part Number
• UNR32A1 × 2
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
IC
PT
Tj
Tstg
50
50
80
125
125
−55 to +125
Note) *: Measuring on substrate at 17 mm × 10 mm × 1 mm
Unit
V
V
mA
mW
°C
°C
0.12+-00..0023
654
123
(0.35) (0.35)
1.00±0.05
Display at No.1 lead
Unit: mm
0 to 0.02
1: Emitter (Tr1)
2: Emitter (Tr2)
3: Base (Tr2)
4: Collector (Tr2)
5: Base (Tr1)
6: Collector (Tr1)
SSSMini6-F1 Package
Marking Symbol: 7Z
Internal Connection
65
4
Tr1 Tr2
■ Electrical Characteristics Ta = 25°C ± 3°C
123
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0
50
Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0
50
Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0
0.1
Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0
0.5
Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0
0.5
Forward current transfer ratio
hFE Ratio *
hFE VCE = 10 V, IC = 5 mA
hFE(Small/ VCE = 10 V, IC = 5 mA
35
0.5 0.99
Large)
Collector-emitter saturation voltage
VCE(sat) IC = 10 mA, IB = 0.3 mA
0.25
Output voltage high level
VOH VCC = 5 V, VB = 0.5 V, RL = 1 kΩ
4.9
Output voltage low level
VOL VCC = 5 V, VB = 2.5 V, RL = 1 kΩ
0.2
Input resistance
R1
−30% 10 +30%
Resistance ratio
R1 / R2
0.8 1.0 1.2
Transition frequency
fT VCB = 10 V, IE = −2 mA, f = 200 MHz
150
V
V
µA
µA
mA
V
V
V
kΩ
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Ratio between one and another
Publication date: June 2003
SJJ00271BED
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet NP062A1.PDF ] | |
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