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PDF HFT150-28 Data sheet ( Hoja de datos )
| Número de pieza | HFT150-28 | |
| Descripción | NPN SILICON RF POWER TRANSISTOR | |
| Fabricantes | ASI | |
| Logotipo |  |
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HFT150-28
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI HFT150-28 is Designed for
FEATURES:
• PG = 16 dB min. at 150 W/30 MHz
• IMD3 = -28 dBc max. at 150 W(PEP)
• Omnigold™ Metalization System
MAXIMUM RATINGS
ID 16 A
V(BR)DSS
65 V
VGS
PDISS
TJ
T STG
θ JC
± 40 V
300 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
0.60 OC/W
PACKAGE STYLE .500 4L FLG
A
FULL R
C
B
.112x45° L
Ø.125 NOM.
E
H
D
GF
K
IJ
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A .220 / 5.59
.230 / 5.84
B .125 / 3.18
C .245 / 6.22
D .720 / 18.28
.255 / 6.48
.7.30 / 18.54
E .125 / 3.18
F .970 / 24.64
.980 / 24.89
G .495 / 12.57
.505 / 12.83
H .003 / 0.08
.007 / 0.18
I .090 / 2.29
J .150 / 3.81
.110 / 2.79
.175 / 4.45
K .280 / 7.11
L .980 / 24.89
1.050 / 26.67
ORDER CODE: ASI10616
CHARACTERISTICS TC = 25 OC
SYMBOL
NONETEST CONDITIONS
V(BR)DSS
VGS = 0 V
IDS = 100 mA
IDSS VGS = 0 V
VDS = 28 V
IGSS VGS = 20 V
VDS = 0 V
VGS VDS = 10 V
ID = 100 mA
VDS VGS = 10 V
ID = 10 A
GFS VDS = 10 V
ID = 5 A
MINIMUM TYPICAL MAXIMUM
65 --- ---
--- --- 0.5
--- --- 1.0
1.0 --- 5.0
--- --- 1.5
3.5 ---
---
UNITS
V
mA
µA
V
V
mho
CISS
COSS
CRSS
VGS = 28 V
375
VDS = 0 V
F = 1.0 MHz
---
188
---
pF
26
PIN
GPS
VDD = 28 V IDQ = 250 mA
f = 175 MHz
POUT = 150 W (PEP)
15 W
10 dB
η 50 %
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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| PDF Descargar | [ Datasheet HFT150-28.PDF ] | |
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