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Infineon Technologies - OptiMOS2 Power-Transistor

Numéro de référence IPD05N03LB
Description OptiMOS2 Power-Transistor
Fabricant Infineon Technologies 
Logo Infineon Technologies 





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IPD05N03LB fiche technique
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OptiMOS®2 Power-Transistor
Features
• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC1) for target applications
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Superior thermal resistance
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
Product Summary
V DS
R DS(on),max
ID
IPD05N03LB G
30 V
4.8 m
90 A
PG-TO252-3-11
Type
IPD05N03LB G
Package
Ordering Code
PG-TO252-3-11 Q67042-S4262
Marking
05N03LB
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C2)
T C=100 °C
Pulsed drain current
I D,pulse T C=25 °C3)
Avalanche energy, single pulse
E AS I D=90 A, R GS=25
Reverse diode dv /dt
dv /dt
I D=90 A, V DS=20 V,
di /dt =200 A/µs,
T j,max=175 °C
Gate source voltage4)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Rev. 1.2
page 1
Value
90
74
420
120
6
±20
94
-55 ... 175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
2004-12-16

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