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PDF 2SB1218A Data sheet ( Hoja de datos )
| Número de pieza | 2SB1218A | |
| Descripción | Silicon PNP Epitaxial Transistor | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Transistor
2SB1218A
Silicon PNP epitaxial planer type
For general amplification
Complementary to 2SD1819A
s Features
q High foward current transfer ratio hFE.
q S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–45
–45
–7
–200
–100
150
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
Unit: mm
0.425
2.1±0.1
1.25±0.1
0.425
1
3
2
0.2±0.1
1:Base
2:Emitter
3:Collector
EIAJ:SC–70
S-Mini Type Package
Marking symbol : B
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to base voltage
ICBO
ICEO
VCBO
VCB = –20V, IE = 0
VCE = –10V, IB = 0
IC = –10µA, IE = 0
–0.1 µA
–100 µA
–45 V
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
VCEO
VEBO
hFE*
IC = –2mA, IB = 0
IE = –10µA, IC = 0
VCE = –10V, IC = –2mA
–45 V
–7 V
160 460
Collector to emitter saturation voltage VCE(sat)
IC = –100mA, IB = –10mA
– 0.3 – 0.5
V
Transition frequency fT VCB = –10V, IE = 1mA, f = 200MHz 80 MHz
Collector output capacitance
Cob
VCB = –10V, IE = 0, f = 1MHz
2.7 pF
*hFE Rank classification
Rank
hFE
Marking Symbol
Q
160 ~ 260
BQ
R
210 ~ 340
BR
S
290 ~ 460
BS
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SB1218A.PDF ] | |
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