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PDF TC2997G Data sheet ( Hoja de datos )
| Número de pieza | TC2997G | |
| Descripción | GaAs Power FETs | |
| Fabricantes | Transcom | |
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TC2997G
PRE2_20071107
Preliminary
3.5 GHz 16 W Flange Ceramic Packaged GaAs Power FETs
FEATURES
16 W Typical Power at 3.5 GHz
9 dB Typical Linear Power Gain at 3.5 GHz
High Linearity: IP3 = 52 dBm Typical
High Power Added Efficiency: Nominal PAE of 37 %
100 % DC and RF Tested
Flange Ceramic Package
Suitable for WiMax and WLL applications
PHOTO ENLARGEMENT
DESCRIPTION
The TC2997G is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power
transistor. The flange ceramic package provides the best thermal conductivity for the GaAs FET. All
devices are 100% DC and RF tested to assure consistent quality. Typical applications include high
dynamic range power amplifier for commercial applications.
ELECTRICAL SPECIFICATIONS
Symbol
CONDITIONS
P1dB Output Power at 1dB Gain Compression Point, Vd = 10V, Id = 4A, f=3.4 – 3.6GHz
GL Linear Power Gain Vd = 10V, Id = 4A, f=3.4 – 3.6GHz
IP3 Intercept Point of the 3rd-order Intermodulation, Vd = 10V, Id = 4A, f=3.4 – 3.6GHz, *PSCL = 32 dBm
PAE Power Added Efficiency at 1dB Compression Power
IDSS
gm
VP
BVDGO
Rth
Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V
Transconductance at VDS = 2 V, VGS = 0 V
Pinch-off Voltage at VDS = 2 V, ID = 60 mA
Drain-Gate Breakdown Voltage at IDGO =15 mA
Thermal Resistance
*PSCL: Output Power of Single Carrier Level, delta frequency=5MHz.
MIN TYP MAX UNIT
41.5 42.5
dBm
89
dB
52 dBm
37 %
18.75
A
13500
mS
-1.7 Volts
20 22
Volts
0.6 C/W
ABSOLUTE MAXIMUM RATINGS at 25 C
Symbol
VDS
VGS
IDS
Pin
PT
TCH
TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
RF Input Power, CW
Continuous Dissipation
Channel Temperature
Storage Temperature
Rating
12 V
-5 V
IDSS
37.5 dBm
150 W
175 C
- 65 C to +175 C
HANDLING PRECAUTIONS:
The user must operate in a clean, dry environment.
Electrostatic Discharge (ESD) precautions should
be observed at all stages of storage, handling,
assembly, and testing. The static discharge must be
less than 300V.
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
P1/3
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| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet TC2997G.PDF ] | |
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